Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD

Toko, Susumu; Hashimoto, Yuji; Kanemitu, Yoshinori; Torigoe, Yoshihiro; Seo, Hyunwoong; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

doi:10.1088/1742-6596/518/1/012008

Cited by 4 publications

(7 citation statements)

References 35 publications

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“…As shown in Fig. 1, we performed deposition experiments using MHDPCVD with a cluster-eliminating filter [14][15][16][17]. We deposited a-Si:H films on a 5 cm × 2.5 cm Si substrate.…”

Section: Methodsmentioning

confidence: 99%

“…However, to ensure a-Si:H thin film solar cells remain highly efficient, it is necessary to suppress light-induced degradation [2][3][4][5][6][7][8][9][10] by lowering the density of the Si-H 2 bonds in a-Si:H films [6]. Therefore, for reducing Si-H 2 bond density, we developed deposition methods [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…A-Si:H films are extensively deposited via a SiH 4 discharge plasma [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17], which contains one major deposition species of SiH 3 radicals and two minor deposition species: HOS molecules in the size range below 0.5 nm and clusters in the size range above 0.5 nm [12]. To reduce cluster incorporation, we adopted the multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) method together with a cluster-eliminating filter.…”

Section: Introductionmentioning

confidence: 99%

“…To reduce cluster incorporation, we adopted the multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) method together with a cluster-eliminating filter. According to this method, clusters are transported from the discharge region to the vacuum pump via a fast gas flow [14][15][16][17]. In this study, we examined the effect of gas velocity on the SiH 2 /SiH bond density ratio of the a-Si:H films using Raman spectroscopy, micro-FTIR (Fourier transauthor's e-mail: l.shi@plasma.ed.kyushu-u.ac.jp * ) This article is based on the presentation at the 2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018).…”

Section: Introductionmentioning

confidence: 99%

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Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films

Shi

Tanaka

Hara

et al. 2019

Plasma and Fusion Research

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We studied how the deposition of SiH 3 radicals, higher-order silane molecules, and clusters contributed to the bond configuration of hydrogenated amorphous silicon (a-Si:H) films. In our experiment, the deposition of three species was controlled using a multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) method using a cluster-eliminating filter. We reduced the incorporation of higher-order silane (HOS) molecules into the films by increasing the gas flow velocity in the hollows from 1008 to 2646 cm/s. The results show that the lower incorporation of HOS molecules into the films reduced the SiH 2 /SiH bond ratio, i.e., I SiH2 /I SiH. Moreover, two-dimensional profiles of the I SiH2 /I SiH ratio and the surface morphology suggest that the surface migration of HOS molecules is similar to that of the SiH 3 radicals, and the I SiH2 /I SiH ratio is localized by the deposition of HOS molecules. Moreover, the results of optical emission spectroscopy show that HOS radical generation is irrelevant to the gas flow velocity.

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“…As shown in Fig. 1, we performed deposition experiments using MHDPCVD with a cluster-eliminating filter [14][15][16][17]. We deposited a-Si:H films on a 5 cm × 2.5 cm Si substrate.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films

Shi

Tanaka

Hara

et al. 2019

Plasma and Fusion Research

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“…A lower density of Si-H 2 bonds in a-Si:H films leads to higher stability of the films. Cluster incorporation into films contributes to Si-H 2 bond formation in the films [11][12][13][14][15]. SiH 3 radicals are the main deposition precursors for high-quality a-Si:H films, while Si-H 2 bonds are also formed by surface reactions of SiH 3 radicals [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD

Tanaka

Hara

Nagaishi

et al. 2019

Plasma and Fusion Research

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Light-induced degradation is an important problem concerning hydrogenated amorphous silicon (a-Si:H) solar cells. A-Si:H films of lower Si-H 2 bond density exhibit less light-induced degradation. In this study, Raman spectroscopy measurements of a-Si:H films with P-layer/I-layer structure reveal that high-density Si-H 2 bonds exist in the I-layer within 60 nm of the P/I interface. These Si-H 2 bonds originate from surface reactions of SiH 3 radicals, as the alternative origin (i.e., cluster incorporation) is considerably suppressed by a multi-hollow discharge plasma chemical vapor deposition method. For an I-layer thickness of 20 nm, the density ratio of Si-H 2 and Si-H bonds in the I-layer decreases from 0.133 to 0.053 as the substrate temperature increases from 170 • C to 250 • C. Fine tuning of the substrate temperature during the initial stage of I-layer deposition is thus effective in suppressing Si-H 2 bond formation at the P/I interface.

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Correlation between SiH₂/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells

Keya

Kojima

Torigoe

et al. 2016

Jpn. J. Appl. Phys.

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We have measured the hydrogen content ratio I SiH2/I SiH associated with Si–H2 and Si–H bonds in p–i–n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I SiH2/I SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I SiH2/I SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I SiH2/I SiH of 0.03–0.09, a PIN cell has I SiH2/I SiH = 0.18 because many Si–H2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si–H2 bond formation in the P-layer and at the P/I interface.

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Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD

Cited by 4 publications

References 35 publications

Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H<sub>2</sub>/Si-H Bond Density Ratio of a-Si:H Films

Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H<sub>2</sub>/Si-H Bond Density Ratio of a-Si:H Films

Identification and Suppression of Si-H<sub>2 </sub>Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH<sub>4 </sub>Plasma CVD

Correlation between SiH₂/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells

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Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD

Cited by 4 publications

References 35 publications

Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H<sub>2</sub>/Si-H Bond Density Ratio of a-Si:H Films

Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H<sub>2</sub>/Si-H Bond Density Ratio of a-Si:H Films

Identification and Suppression of Si-H<sub>2 </sub>Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH<sub>4 </sub>Plasma CVD

Correlation between SiH2/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells

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Correlation between SiH₂/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells