Contribution to the characterization of reference materials for thin-film analysis in solar-energy and semiconductor technologies

Depth profiling of a Co-implanted silicon wafer by total-reflection X-ray fluorescence analysis after repeated oxidation and HF-etching

“…Such buried layers can also serve as standard samples in thin-layer analysis. [4][5][6] The quality of these advanced materials has to be controlled in detail. Different methods can be used for the characterization of thin and shallow layers in the nm range.…”