Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Armitage, R.; Hong, Wonbin; Yang, Qing; Feick, H.; Gebauer, J.; Weber, E. R.; Hautakangas, S.; Saarinen, K.

doi:10.1063/1.1578169

Cited by 172 publications

(111 citation statements)

References 18 publications

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“…Our findings concerning YL in GaN:C have been reported previously. 12 Additional deep-level luminescence of unknown origin peaking near ~2.5 eV also appears strongly in layers of lower carbon concentration, overlapping the YL on its high energy side and the BL on its low energy side. This ~2.5 eV emission is strongest in nominally undoped reference material and is not related to carbon.…”

Section: Resultsmentioning

confidence: 99%

Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C Ga -C N deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm 2 ) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

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Section: Resultsmentioning

confidence: 99%

Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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“…Three typical luminescence peaks were observed: 366 nm for the emission from GaN bulk, 426 nm for the emission from the InGaN well, and 562 nm which is called 'yellow luminescence' and is associated with defect states between GaN band edges. [8][9][10] The spectrum at the point 65, which is close to the center of a mask, exhibited a reduced yellow luminescence compared with the point 75 which is on the unmasked sapphire surface. Conversely, the luminescence from the GaN bulk and the InGaN well is stronger at the point 65.…”

Section: Cathode Luminescence From Ingan/gan Mqwsmentioning

confidence: 99%

Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth

et al. 2009

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In order to examine the effect of threading dislocations on the structure of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor-phase epitaxy (MOVPE), epitaxial lateral overgrowth (ELO) on a patterned sapphire substrate was employed and the MQWs were characterized as a function of the lateral position in terms of cathode luminescence (CL), transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). The intensity of a blue luminescence peak (426 nm) was larger for the epitaxial layer overriding on the masks than that for the layer on the unmasked area, while the peak wavelength was independent of the position. Threading dislocations, which were generated at the GaN/sapphire interface, did not propagate to the surface of GaN layer on the masks. The thicknesses of both the InGaN well and the GaN barrier, on the other hand, were the same for the MQWs both on the unmasked surface and on the masks, which is consistent with the invariable peak wavelength of the blue luminescence. For an InGaN well with the indium content of around 10%, it seems that the existence of threading dislocations does not affect the structure of the MQWs but just reduces the luminescence intensity through a recombination via mid-gap states.

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“…The compensating Ga-vacancy-related defects exhibit negative charge states, with transitions deep in the wideband gap of GaN, and they have been shown to contribute to both nonradiative recombination processes and luminescent processes such as the parasitic yellow luminescence. A wide body of experimental and theoretical research exists on these defects (Neugebauer and Van de Walle, 1994Kaufmann et al, 1999;Armitage et al, 2003;Chow et al, 2004;Limpijumnong and Van de Walle, 2004;Van de Walle and Neugebauer, 2004;Reshchikov and Morkoç, 2005).…”

Section: F the Gallium Vacancy And Its Complexes In Gallium Nitridementioning

confidence: 99%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

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Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

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Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Cited by 172 publications

References 18 publications

Analysis of the carbon-related “blue” luminescence in GaN

Analysis of the carbon-related “blue” luminescence in GaN

Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth

Defect identification in semiconductors with positron annihilation: Experiment and theory

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