Control and Probe of Carrier and Spin Relaxations in InSb Based Structures

Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

“…[11][12][13][14][15] Here we report spin/carrier relaxation measurements on III-Mn-V narrow gap system grown by molecular beam epitaxy technique. 16 We measure the above relaxations using femtosecond laser pulses with two different energies per pulse, resulting in different laser fluences and therefore different photoinduced carrier densities. We compare our results with recent time resolved measurements on other narrow gap semiconductor ferromagnetic systems, such as InMnAs with 9% ͑Ref.…”