Control of atomic layer degradation on Si substrate

Nakamura, Y.; Tatsumi, Tetsuya; Kobayashi, Shōji; Kugimiya, K.; Harano, T.; Andõ, Akira; Kawase, Tomohito; Hamaguchi, Satoshi; Iseda, Seiji

doi:10.1116/1.2713114

Cited by 19 publications

(14 citation statements)

References 7 publications

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“…In terms of simulation methods of plasma damage, molecular dynamics (MD) calculation [7][8][9][10][11] can microscopically predict the damage distribution. However, the MD calculation generally has a very limited range and has difficulty in simultaneously considering a time-dependent etched profile and physical damage on the 100 nm scale.…”

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confidence: 99%

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Kuboi¹,

Tatsumi²,

Kobayashi³

et al. 2012

Appl. Phys. Express

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We have demonstrated an InP/InGaAs composite-channel metal-oxide-semiconductor field-effect transistor with a selectively regrown n þ -InGaAs source/drain formed by metal organic vapor-phase epitaxy. A 150-nm-long channel was fabricated using a dummy gate and by laterally buried regrowth in the channel undercut. The gate stack was formed after regrowth by replacing the dummy gate. The carrier density of the regrown layer was 4:9 Â 10 19 cm À3 . The maximum drain current at a drain voltage V d ¼ 1 V and a gate voltage V g ¼ 3 V was 0.93 mA/m and the maximum transconductance was 0.53 mS/m at V d ¼ 0:65 V. #

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confidence: 99%

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Kuboi¹,

Tatsumi²,

Kobayashi³

et al. 2012

Appl. Phys. Express

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“…The IL is a partially oxidized or disordered Si layer, i.e., a mixed layer consisting of crystalline Si and SiO 2 phases. Based on the previous report, 26 in SE analysis, an optical model assuming four layers (air / SL / IL / Si substrate) was employed. We applied effective medium approximation (EMA) to define the IL.…”

Section: Methodsmentioning

confidence: 99%

“…Using SE, several reports discussed depth profiles of dielectric constant change. [22][23][24][25][26] For example, H-plasma damaged samples were found to have relatively thick IL ∼10 nm, 14,27 which was difficult to remove by wet-etching. 14 These findings related to SL and IL are of great importance to device designs under process constraints, because the final topological structure of MOSFETs with a Si recess defines the performance.…”

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confidence: 99%

Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

Nakakubo

Eriguchi

Ono

2015

ECS J. Solid State Sci. Technol.

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Characterization of plasma-induced Si substrate damage is demonstrated using an electrical capacitance-voltage (C-V) technique customized for the nano-scale analysis. Low resistive Si wafers are exposed to an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP). We focus on the effects of plasma parameters and wet-etching processes on plasma-induced physical damage (PPD) analyses. The optical thicknesses of surface and interfacial layers (d SL and d IL ) were characterized using spectroscopic ellipsometry (SE) and compared with the electrical oxide thicknesses (EOT) obtained by the C-V technique. In the case of asdamaged samples, the optical thickness d SL by SE is found to be smaller than the EOT by the C-V technique, while the sum of d SL and d IL was approximately equal to the EOT. A diluted hydrofluoric acid (DHF) wet-etch step is employed to address depth profile of defect density in damaged samples. We identify the latent defect density, d SL , and d IL after the DHF wet-etch, which are indispensible for practical device performance designs. It is found that, although the average energy of incident ions (Ē ion ) is larger for the case of CCP, the latent defect density of CCP-damaged samples is smaller than that of ICP even after the wet-etching. This finding is in sharp contrast to previous pictures-the largerĒ ion leads to the thicker damaged layer and the larger latent defect density. We propose a model for these conflicting results, where the profiles of defect density and the sensitivities of each analysis technique are taken into account. The present work highlights the importance of the nano-scale damage characterization using the C-V technique, allowing to understand the influence of latent defects and to enable better design of future electronic devices. Plasma processing plays an important role in manufacturing present-day microelectronics. Over the last two decades, plasma process-induced damage (PID) has been one of the crucial problems in fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) 1-3 in LSI (Large Scale Integration) circuits. PID consists of four major mechanisms.2 The first mechanism is damage induced by conduction current from plasma flowing into MOSFETs, resulting in degradation of the performance and increase in the parameter variability owing to plasma-induced electrical stress. 1,4,5 This electrical interaction has been discussed and is called plasma-induced charging damage.2 The second mechanism is damage induced by incident photons on material surface. Photons with high energy can interact with materials such as photoresist masks and low-k dielectrics, leading to bond breaking in the materials exposed to plasma, or in some cases, create an interface state between SiO 2 and Si substrate.6-8 The third mechanism is surface and bulk chemical reaction with fast diffusion reactions causing material modification such as surface defects and roughness. The fourth mechanism is damage induced by high-energy ion bombardment on Si substrates or oth...

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“…1 Hydrogen ions are reported to generate the deep damaged layer and cause the degradation of electrical properties in the mixture of fluorocarbon chemistry to etch the dielectric film. [5][6][7][8][9][10][11] However, a detailed analysis of hydrogen-induced damage in HBr/O 2 plasma and the impact of this damage on electrical performance has not yet been performed.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

Fukasawa¹,

Nakakubo

Matsuda

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Silicon substrate damage caused by HBr/O 2 plasma exposure was investigated by spectroscopic ellipsometry (SE), high-resolution Rutherford backscattering spectroscopy, and transmission electron microscopy. The damage caused by H 2 , Ar, and O 2 plasma exposure was also compared to clarify the ion-species dependence. Although the damage basically consists of a surface oxidized layer and underlying dislocated Si, the damage structure strongly depends on the incident ion species, ion energy, and oxidation during air and plasma exposure. In the case of HBr/O 2 plasma exposure, hydrogen generated the deep damaged layer ($10 nm), whereas ion-enhanced diffusion of oxygen, supplied simultaneously by the plasma, caused the thick surface oxidation. In-line monitoring of damage thicknesses by SE, developed with an optimized optical model, showed that the SE can be used to precisely monitor damage thicknesses in mass production. Capacitance-voltage (C-V) characteristics of a damaged layer were studied before and after diluted-HF (DHF) treatment. Results showed that a positive charge is generated at the surface oxide-dislocated Si interface and/or in the bulk oxide after plasma exposure. After DHF treatment, most of the positive charges were removed, while the thickness of the "Si recess" was increased by removing the thick surface oxidized layer. As both the Si recess and remaining dislocated Si, including positive charges, cause the degradation of electrical performance, precise monitoring of the surface structure and understanding its effect on device performance is indispensable for creating advanced devices. V

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Control of atomic layer degradation on Si substrate

Cited by 19 publications

References 7 publications

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

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