Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template

Abstract

The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor–liquid–solid (VLS) growth technique and the use of an anodic aluminum oxide (AAO) template on a single-crystal Si substrate. The [100], [110], and [111] nanowires were selectively obtained by choosing the Si substrate with appropriate crystal orientation. The diameter of a Si nanowire in the AAO template could be controlled by the modification of the pore size of the AAO template with anodic voltage during anodization.

Electrochemical Properties of a Si3N4Dielectric Layer Deposited on Anodic Aluminum Oxide for Chemical Sensors

“…One of the most common techniques in nanotechnology involves anodic aluminium oxide (AAO) [1][2][3]. Its advantage it that it allows the pore size and space between pores to be easily controlled by appropriately managing the anodizing conditions, such as electrolyte, voltage, time and temperature.…”

Fabricating a QCM Device with the Nanostructures Using the AAO Template

“…Then, we can get the regularly arranged pores with high aspect ratio. Our nano structures on the quartz crystal were referred from the AAO nano structure [5]. We tried to use the nano structure derived from AAO.…”

Morphology dependence of optical reflectance properties for a high-density array of silicon nanowires

“…Vertically aligned SiNW arrays with precisely controlled parameters such as the diameter, length, and position of NWs were fabricated by a dry process such as a vapor-liquid-solid technique and dry etching using a lithography technique. [8][9][10][11] On the other hand, bunched NW arrays were prepared by a wet process including metalassisted chemical etching. 12,13) Previous reports showed a difference in light absorption range between the two types of NW array.…”