CONTROL OF CRYSTALLINITY AND MICROSTRUCTURE OF Co-Cr FILMS BY CLUSTER FORMATION IN AN OPPOSING TARGET SPUTTERING

Abstract

The opposing target sputtering (OTS) is characterized to be a unique method for microcluster fonnation of any high melting-point materials. This method was applied to form Co-cr films for discussing thin film formation process compared with RF magnetron sputtering and DC magnetron sputtering. Co-Cr film fonnation with the OTS is characterized on the following properties for high density magnetic recording media. Densely packed microstructures of small-sized particles are typically observed to be in the Co-Cr thin films prepared by the OTS. High c-axis crystallite orientation of h.c.p. structure can be obtained from less than 20 nm-thick Co-cr films by the OTS. More than 1000 oe of perpendicular coercivity was obtained at lower substrate temperature than 150°C. It is thought that the effects of cluster formation and reduced energy loss of sputtered-atoms in the OTS process take out the above properties on the Co-Cr films.