Control of Cu morphology on Ru-passivated and Ru-doped TaN Surfaces – promoting growth of 2D conducting copper for CMOS interconnects

Abstract

Prolonging the lifetime of Cu as level 1 and level 2 interconnect metal in future nanoelectronic devices is a significant challenge as device dimensions continue to shrink and device structures become more complex. At nanoscale dimensions Cu has high resistivity which prevents it functioning as a conducting wire and prefers to form non-conducting 3D islands. Given that changing from Cu to an alternative metal is challenging, we are investigating new materials that combine properties of diffusion barriers and seed liners to reduce the thickness of this layer and to promote successful electroplating of Cu to facilitate the coating of high-aspect ratio interconnect vias and to allow for optimal electrical conductance. In this study we propose a new combined barrier/liner materials based on modifying the surface layer of TaN barrier through Ru incorporation. Simulating a model Cu29 structure at 0 K and through finite temperature ab initio molecular dynamics on these surfaces allows us to demonstrate how the Ru content can control copper wetting, adhesion and thermal stability properties. Activation energies for single atom migrations onto a nucleating island of Cu allow insight into the growth mechanism of a Cu thin-film. Using this understanding allows us to tailor the Ru content on TaN to control the final morphology of the Cu film.

A Study of Group 13-Nitride Atomic Layer Deposition : Computational Chemistry Modelling of Atomistic Deposition Processes

“…81 The adhesion of copper films onto other materials such as TaN has been modelled on the atomistic level to find how different amount of Ru doping determine film or island growth. 73 The chemical processes during ALD of nitride materials have also been investigated by modelling methods. In many cases ALD of nitrides behaves similar to ALD of oxides, such as HfN from hafnium methylamide and ammonia compared to HfO2 from the same hafnium precursor and water.…”

“…Different scales for simulations of CVD or ALD processes. Molecular dynamics of Cu on TaN from Nies et al73…”