Control of dopant distribution profiles in GaInP laser diodes with Mg- and Se-doped AlInP cladding layers

Winterhoff, R.; Raisch, P; Frey, Volker; Wagner, W. R.; Scholz, F.

doi:10.1016/s0022-0248(98)00673-3

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Cited by 8 publications

(1 citation statement)

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“…It was tried to overcome these problems by introducing diffusion barriers [8] or change to magnesium (Mg) as p-dopant [9], which unfortunately suffers from a memory effect in the reactor [10]. Both ideas have also been combined [11].…”

Section: Introductionmentioning

confidence: 99%

High-power red laser diodes grown by MOVPE

Zorn

Wenzel

Zeimer

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

High-power red laser diodes grown by MOVPE

Zorn

Wenzel

Zeimer

et al. 2007

Journal of Crystal Growth

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MOVPE growth of laser structures for high-power applications at different ambient temperatures

Bugge

Crump

Frevert

et al. 2016

Journal of Crystal Growth

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Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes

Raisch

Winterhoff

Wagner

et al. 1999

Applied Physics Letters

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Al 0.5 In 0.5 P/Ga 0.5 In 0.5 P superlattice structures have been investigated as multiquantum barriers (MQB) in 630 nm band laser diodes in order to reduce thermal current losses. By inserting an optimized MQB, we have succeeded in improving both threshold currents and characteristic temperatures of such devices. However, the optimized dimensions of the MQB found experimentally deviated strongly from those predicted theoretically, indicating that the commonly used theoretical description assuming effective mass approximation, electron wave interference, and using transfer matrix calculation is not adequate.

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Control of dopant distribution profiles in GaInP laser diodes with Mg- and Se-doped AlInP cladding layers

Cited by 8 publications

References 7 publications

High-power red laser diodes grown by MOVPE

High-power red laser diodes grown by MOVPE

MOVPE growth of laser structures for high-power applications at different ambient temperatures

Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes

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