Control of GaInSb alloy composition grown from ternary solution

Yoneyama, Tsuyoshi; Kimura, Masakazu; Sukegawa, Tokuzo

doi:10.1016/s0022-0248(97)00540-x

Cited by 15 publications

(5 citation statements)

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“…For example, in the Czochralski experiments of Tanaka et al [9,10] the growth rate was sufficiently slow (0.2-0.3 mm/h) to allow the solute to diffuse to the growth front. Unfortunately, the axial composition was still not consistently controlled.…”

Section: Introductionmentioning

confidence: 99%

Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Houchens

Becla

Tritchler

et al. 2010

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Houchens

Becla

Tritchler

et al. 2010

Journal of Crystal Growth

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“…The alloy crystals offer the possibility to reduce the problem of lattice mismatch at the interface between a substrate and an epilayer. Ternary alloy crystals such as InGaAs [1][2][3][4][5][6][7], InGaSb [8][9][10][11][12], InSbBi [13,14], InAsSb [15,16] have been grown until now. However, it is very difficult to grow large single crystals of high quality, because there are three major problems, which must be overcome.…”

Section: Introductionmentioning

confidence: 99%

In situ observation of composition profiles in the solution by X-ray penetration method

Hayakawa

Hikida

Morii

et al. 2008

Journal of Crystal Growth

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The X-ray penetration intensity during the diffusion process of NH 4 Br into H 2 O was measured by a CdTe line sensor as a function of time and it was converted to the NH 4 Br composition using a calibration line. The diffusion coefficient of NH 4 Br into H 2 O was estimated to be 2.2 Â 10 À5 cm 2 /s by comparing the calculated results. The method was applied to the growth of InGaSb from the In-Ga-Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In-Ga-Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution. r

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“…A small (12 mm long) crystal was grown with a uniform composition of about 3 mol% InSb. Single and poly crystals of higher but non-uniform compositions were also grown by the same method [21,22].…”

Section: Introductionmentioning

confidence: 99%