Control of high-density plasma sources for CVD and etching

Suzuki, Keiji; Sugai, Hideo; Nakamura, Keiji; Ahn, T. H.; Nagatsu, Masaaki

doi:10.1016/s0042-207x(97)00054-7

Cited by 5 publications

(1 citation statement)

References 25 publications

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“…7) One of the solutions to above problems is to use internaltype inductively coupled plasmas. 8) Currently, various internal-type ICPs utilizing serpentine-type antennas have been reported for the applications of large-area FPD processing [9][10][11] and semiconductor processing. 12) However, in the case of FPD processing, due to the large long serpentine-type antenna close to operating rf wavelength and its high impedance, it is difficult to remove the standing wave effect and the plasma instability as the chamber size increases.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Parallel Internal-Type Inductively Coupled Plasmas for Large Area Flat Panel Display Processing

Kim

Lee

Jung

et al. 2004

Jpn. J. Appl. Phys.

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The development of a large-area high-density plasma source is desired for various plasma processes from microelectronics fabrication to flat panel display (FPD) device fabrication. In this study, using a parallel internal-type (double comb-type) inductively coupled plasma source having the size of 1020 mm Â 830 mm, high density plasmas on the order of 2:2 Â 10 11 cm À3 could be obtained with Ar at 5000 W inductive power. Plasma uniformity on the substrate in the size of 920 mm Â 730 mm decreased with the increase in inductive power and was about 8% when the inductive power was 5000 W. When SF 6 was used to etch SiO 2 using the source, the SiO 2 etch rate higher than 2000A/min with an etch uniformity of about 6% could be obtained at 5000 W inductive power, À350 V bias voltage, and 15 mTorr operating pressure.

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