Control of in‐plane epitaxial relationship of <i>c</i> ‐plane AlN layers grown on <i>a</i> ‐plane sapphire substrates by hydride vapor phase epitaxy

Tajima, Jumpei; Togashi, Rie; Murakami, Hisashi; Kumagai, Yoshinao; Takada, Kazuya; Koukitu, Akinori

doi:10.1002/pssc.201000954

Cited by 18 publications

(10 citation statements)

References 10 publications

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“…AlN grown by HVPE has demonstrated high UV transparency with an absorption coefficient as low as 6.6 /cm at 265 nm [5]. Several groups have demonstrated HVPE growth of AlN directly on sapphire substrates; the best XRD rocking curve FWHMs were in the ranges of 200 to 600 arcsec and 500 to 800 arcsec for on-axis and off-axis peaks, respectively [6,7,8].…”

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confidence: 99%

High temperature HVPE of AlN on sapphire templates

Baker¹,

Mayo²,

Veisi³

et al. 2014

Phys. Status Solidi C

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Aluminum nitride (AlN) was grown on c‐plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot‐wall reactor capable of temperatures exceeding 1500 °C. The precursors of aluminum monochloride (AlCl) and aluminum trichloride (AlCl3) were used, and it was determined that AlCl3 was more thermodynamically conducive to single crystalline AlN growth at 1450 °C. AlN templates were optimized at a thickness of 1 µm without cracking. The double axis X‐ray diffraction (XRD) rocking curves full width half maximums (FWHMs) were reproducibly demonstrated with an average of 130 arcsec for the (002) and 516 arcsec for the (102). The AlN was transparent in the UV spectrum with a band gap cut off of 200 nm. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

High temperature HVPE of AlN on sapphire templates

Baker¹,

Mayo²,

Veisi³

et al. 2014

Phys. Status Solidi C

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“…Therefore, the development of wurtzite (002) or c-axis oriented phase of AlN NFs is vital for most of these applications to obtain higher values of the electromechanical coupling factor, k2t [108]. So far, several methods have been developed for AlN TFs deposition, such as chemical vapour deposition [108,109], pulsed laser ablation deposition [110,111], molecular beam epitaxy [112], the electron shower method [113], dual ion beam deposition [114,115], reactive radio-frequency (RF) magnetron sputtering [116][117][118], reactive mid-frequency (MF) reactive sputtering [119], reactive pulsed direct-current (DC) unbalanced magnetron sputtering [120] and hydride vapour phase epitaxy (HVPE) [121][122][123][124][125]. Most of these methods can be applied to grow AlN TFs that are preferentially oriented to the c-axis on various substrates under suitable deposition conditions.…”

Section: D Aln Thin Films (Tfs)mentioning

confidence: 99%

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

Nersisyan

Lee

Kim

et al. 2019

International Materials Reviews

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Recent developments have seen breakthroughs in zero-, one-, two-, and three-dimensional AlN micro-and nanostructures, such as nanoparticles, nanowires, nanotubes, thin films and 3D multifold symmetry crystals. The attractive electrical, optical, and thermal properties of AlN make these materials irreplaceable for microelectrochemical systems (MEMS), surface acoustic waves (SAWs) and light emitting diodes (LED). The significant interest in the field of AlN nanostructure synthesis and application encouraged us to summarise the reported data to better understand the physical and chemical aspects of AlN crystal growth processes. Four main topics are covered in this review article: (1) the morphological diversity of AlN nanoand microstructures; (2) formation mechanisms and growth dynamics; (3) theoretical simulation of growth processes based on density functional theory (DFT) and phase field (PF) modelling approaches; (4) application and devices. This article also provides a perspective on future research relevant to AlN micro-and nanostructures.

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“…[9][10][11] Multiple groups have reported the growth of AlN directly on sapphire substrates by HVPE, but the crystal quality of AlN templates was relatively poor. [12][13][14][15][16] Moreover, the growth of high crystallinity crack-free thick AlN on a flat sapphire substrate (FSS) is still challenging owing to the significant mismatch of the thermal expansion coefficient and lattice constants between AlN and the sapphire substrate. The application of patterned sapphire substrates (PSS) has been proven effective in realizing strain management to prevent layer cracking as well as reducing the UV light total reflection at the AlN/sapphire interface.…”

Section: Introductionmentioning

confidence: 99%

Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes

Lee

Jeon

Jung

et al. 2023

Physica Status Solidi (a)

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Herein, the characteristics of AlN epilayers grown directly on hole‐type patterned sapphire substrate (HPSS) by hydride vapor‐phase epitaxy (HVPE) are reported. To investigate the effect of HPSS, the threading dislocation densities (TDDs) of AlN films grown simultaneously on HPSS and flat sapphire substrate (FSS) are analyzed by transmission electron microscopy. The corresponding TDD is measured to be 4.38 × 108 cm−2 for the AlN sample grown on HPSS, which is significantly lower than the value of 1.48 × 109 cm−2 on the FSS. The usability of the AlN/HPSS template for deep ultraviolet (DUV) light‐emitting diodes (LEDs) is proven by growth of AlGaN‐based LED structure emitting at 278 nm with single peak emission in a metal‐organic chemical vapor deposition reactor. The light output power of flip‐chip LED grown and fabricated on AlN/HPSS template is enhanced by a factor of 1.25 when compared with LED on AlN/FSS template at 350 mA injecting current. These results suggest that the high‐quality AlN template grown on properly designed HPSS by HVPE can make a significant contribution toward the realization of highly efficient nitride‐based DUV‐LEDs.

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Control of in‐plane epitaxial relationship of c ‐plane AlN layers grown on a ‐plane sapphire substrates by hydride vapor phase epitaxy

Cited by 18 publications

References 10 publications

High temperature HVPE of AlN on sapphire templates

High temperature HVPE of AlN on sapphire templates

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes

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