Control of InAs Nanowire Growth Directions on Si

Abstract

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Crosssectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.

Polarized and resonant Raman spectroscopy on single InAs nanowires

“…Among the III-V compounds, InAs has emerged as a narrow-band-gap semiconductor with very high electron mobility and a small electron effective mass, 5 which is particularly convenient for high-frequency electronic applications. 6 While bulk InAs crystallizes in cubic zinc-blende structure, it has been demonstrated that InAs nanowires can be grown in the wurtzite form.…”

III–V compound semiconductor transistors—from planar to nanowire structures

“…81 , 88 NW selective-area epitaxy (NW-SAE) seems a more promising approach for III-V integration on Si because it avoids the use of a catalyst nanoparticle, and instead uses a patterned oxide mask to control the location of III-V growth. 81 The disadvantage of these techniques is that they rely on Si(111) substrates to grow NWs in that direction. Recently, a template-assisted growth technique has been introduced that overcomes various NW growth limitations ( Figure 4d ).…”

Characterization and analysis of InAs/p–Si heterojunction nanowire-based solar cell

“…Vertical orientation of nanowires can be achieved on Si (1 1 1) substrates in very high yields [14][15][16]. In the case of catalyst-free growth, ordered arrays of nanowires can in principle be attained by employing a patterned SiO 2 mask [15,[17][18][19].…”