Control of resistive switching behaviors of solution-processed HfO_X-based resistive switching memory devices by n-type doping

Abstract

In this study, we investigated the effect of Ni and Ta doping on resistive switching behaviors of solution-processed HfOX-based resistive switching memory (RRAM) devices.

Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

“…13 However, modifying ALD conditions can cause deviation from the ALD window and degradation of properties of the lm. 16 As another approach, numerous studies have focused on manipulation of device structures by incorporating a chemically-active layer, 17,18 by doping, 19,20 and by using bilayer 5,[21][22][23] and trilayer structures. 24 Due to fabrication simplicity to make bilayer RRAM, different structures have been studied, such as ZrO X /HfO X 21 and WO X /NbO X .…”

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c. [ 99,165,166 ] Their low processing temperature is related to the high volatility of the decomposition byproducts, leading to a higher purity in the final product.…”

“…It constitutes a substantial portion of the oxide precursor solutions: around 98% and 90% for lower and higher concentrations, respectively. The most common solvents in solution‐based metal oxide RRAMs are 2‐methoxyethanol (2‐ME), [ 63,72,79,80,98,102,104,105,107,109,112,113,115–119,121,127,129,130,133,134,137,139,142,144,150–153,158,159,168–185 ] ethanol, [ 72,77,78,82,103,108,113,114,120,126,132,135,136,138,145,147,157,162–164,168,186–200 ] deionized (DI) water, [ 73,101,116,120,123,148,162,163,190,201 ] acetic acid, [ 103,121,129–131,134,140,142,144,149,150,152,154,173,179,180,183,202 ] and isopropanol [ 23,123,125,128,136,169,181,203 ] among others (ethylene glycol, [ 141,204 ] 2‐butoxyethanol, [ 205 ] acetylacetone, [ 149 ] and acetonitrile […”

“…Reproduced with permission. [ 159 ] Copyright 2016, The Royal Society of Chemistry. c) Typical bipolar current–voltage ( I – V ) characteristics (inset figure shows the forming process) of pure Co 3 O 4 and Ag–Co 3 O 4 devices.…”

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

“…Resistive switching is a change in electrical resistance between high-resistance state (HRS) and low-resistance state (LRS), and the physical phenomenon of memory operation; therefore, stable and reliable resistance changes in metal oxide materials are very important in ReRAM device applications. Resistive switching behavior has been observed in various oxides, such as NiO 11 12 13 , CuO x 14 15 16 17 18 19 , HfO 2 7 20 21 22 , and Ta 2 O 3 23 24 25 . These oxides are reported to be good candidates for use as the resistive switching layer in ReRAM devices.…”