Semiconductor Cu2ZnSn(S
x
Se1–x
)4 (CZTSSe) solid
solution is considered as a perspective absorber material for solar
cells. However, during its synthesis or deposition, any modification
in the resulting optical properties is hardly predicted. In this study,
experimental and theoretical analyses of CZTSSe bulk crystals and
thin films are presented based on Raman scattering and absorption
spectroscopies together with compositional and morphological characterizations.
CZTSSe bulk and thin films are studied upon a change in the x = S/(S + Se) aspect ratio. The morphological study is
focused on surface visualization of the solid solutions, depending
on x variation. It has been discovered for the first
time that the surface of the bulk CZTSSe crystal with x = 0.35 has pyramid-like structures. The information obtained from
the elemental analysis helps to consider the formation of a set of
possible intrinsic lattice defects, including vacancies, self-interstitials,
antisites, and defect complexes. Due to these results and the experimentally
obtained values of the band gap within 1.0–1.37 eV, a deviation
from the calculated band gap values is estimated in the range of 1.0–1.5
eV. It is suggested which defects can have an influence on such a
band gap change. Also, on comparing the experimental Raman spectra
of CZTSSe with the theoretical modeling results, an excellent agreement
is obtained for the main Raman bands. The proposed theoretical approach
allows to estimate the values of concentration of atoms (S or Se)
for CZTSSe solid solution directly from the experimental Raman spectra.
Thus, the visualization of morphology and the proposed theoretical
approach at various x values will help for a deeper
understanding of the CZTSSe structure to develop next-generation solar
cells.