Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique

Abstract

The overview of optimal parameters for deoxidation of the Si(001) surface using SrO and a pulsed-laser deposition method.

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

“…A metallic Sr target has been employed for the initial 1/2 ML of Sr passivation of the Si surface. Similarly to growth on Si, it was shown that the understanding and precise control of the structure and reconstructions of this initial Sr Zintl phase, and its evolution, are critical for obtaining STO epitaxy . This critical surface passivation, together with optimized annealing schemes, have significantly promoted higher crystalline qualities, showing considerable progress.…”

Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface

“…Besides, the same study reported additional transmission spots the origin of which was not discussed by authors. In our previous studies, 21,22 the 3D structure was reported for the rst time for SrO-silicon system, however without detailed analysis. In the present study we aim to provide novel insight into structural ordering at the surface/interface that is driven by deoxidation process.…”

“…In our recent studies, the same was achieved by the pulsed-laser deposition (PLD) method using strontium [18][19][20] and strontium oxide. 21,22 One of the key elements in epitaxial integration of functional oxides with silicon is the interface quality. However, due to the specic processing conditions, including a high temperature and an oxidizing environment, in combination with a substantial difference in the chemical properties of the materials, achieving control of the interface is challenging.…”

“…10 To avoid this in the case of PLD method, the successful deoxidation of silicon surface with SrO requires careful control of experimental conditions and sub-unit cell thickness of SrO. 21 If this is not the case, at slightly larger SrO thickness (1 nm) a spotty RHEED pattern, referred here to as '3D-structure', appears. 22 While having in mind the reaffirmed validity of the phrase: "the interface is the device", 47,48 it is important to understand the phenomena accompanying the integration of functional oxides with silicon.…”

Growth mechanism of epitaxial SrTiO3 on a (1 × 2) + (2 × 1) reconstructed Sr(1/2 ML)/Si(001) surface

“…22,23 However, the crystal quality of the oxide layer is limited due to the high lattice mismatch of these two buffer systems with Si. Therefore the use of more delicate buffer systems, such as metallic Sr and SrO, has been initiated, [24][25][26][27] while the mechanism of epitaxial integration of the first system with the STO layer represents the focus of this study.…”