Control of the electric and magnetic properties of ZnO films

Tabata, Hitoshi; Saeki, Masanobu; Guo, Shuxia; Choi, Jae-Hyoung; Kawai, Tomoji

doi:10.1016/s0921-4526(01)00861-4

Cited by 18 publications

(15 citation statements)

References 18 publications

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“…For example, studies have been reported on Ti--doped [6], V -doped [7], Cr-doped [8], Mn-doped [9], Fe--doped [10], Co-doped [11], Ni-doped [12], and Cu-doped [13] ZnO.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Mekki

Tabet

2014

Acta Phys. Pol. A

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Transparent zinc oxide thin lms doped with molybdenum have been prepared using a DC reactive magnetron sputtering on glass substrates from metallic ZnMo target. The three lms, called A, B, and C, had 1.9 at.% Mo, 2.8 at.% Mo and 4.7 at.% Mo, respectively. The composition of the lms was determined by X-ray photoelectron spectroscopy. The analysis of Mo 3d 5/2 core level spectra indicated that Mo exist in the lms in Mo 6+ oxidation state irrespective of the Mo content in the lm. The X-ray di raction spectrum of lm A showed a texture along the 002 orientation, while that of lm B showed two peaks, one at θ ≈ 34.5 • and the other at ≈ 36.5 • corresponding to 002 and 101 orientations, respectively. Film C showed two small peaks corresponding to 100 and 110 orientations. Optical measurements showed that all three lms had a transmittance of about 80%. The energy band gap showed a linear increase as Mo concentration increases from 3.29 eV to 3.38 eV. The atomic force microscopy image of lm A showed a homogeneous morphology of the surface of the lm, while the atomic force microscopy images of lms B and C showed an inhomogeneous one.

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“…For example, studies have been reported on Ti--doped [6], V -doped [7], Cr-doped [8], Mn-doped [9], Fe--doped [10], Co-doped [11], Ni-doped [12], and Cu-doped [13] ZnO.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Mekki

Tabet

2014

Acta Phys. Pol. A

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“…The exact nature of the ferromagnetism also remains unclear [1,8,11,13]; among possible problems are the formation of metallic TM or TM-oxide clusters [9,[12][13][14]17] or magnetism from the substrate on which thin films are deposited [18]. Two recent review papers on the subject concluded that a more precise control of the TM dopant in the oxide and careful structural and microstructural analyses are needed [1,11].Experimentally TM dopants have been introduced both during ZnO powder synthesis [10,14,16] and growth of epitaxial thin films [6][7][8][9]11,15,18]. In addition, ion implantation is also actively being explored for TM doping of ZnO [1,12,13,19].…”

mentioning

confidence: 99%

“…Experimentally TM dopants have been introduced both during ZnO powder synthesis [10,14,16] and growth of epitaxial thin films [6][7][8][9]11,15,18]. In addition, ion implantation is also actively being explored for TM doping of ZnO [1,12,13,19].…”

mentioning

confidence: 99%

“…In the case of ZnO, besides V, Cr, Mn, Co and Ni, Fe should also act as a ferromagnetic dopant [3][4][5]. Several reports on ferromagnetic systems based on ZnO can be found in the literature [1,[6][7][8][9][10][11][12][13][14]. Cases in which no ferromagnetic behavior was observed [7,[15][16][17][18] revealed systematic trends for the various transition metals, doping concentrations, and differences between n-and p-type ZnO, but also conflicting results between different authors.…”

mentioning

confidence: 99%

“…It was thus argued [11,14] that experimental reproducibility needs to be improved. The exact nature of the ferromagnetism also remains unclear [1,8,11,13]; among possible problems are the formation of metallic TM or TM-oxide clusters [9,[12][13][14]17] or magnetism from the substrate on which thin films are deposited [18]. Two recent review papers on the subject concluded that a more precise control of the TM dopant in the oxide and careful structural and microstructural analyses are needed [1,11].…”

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confidence: 99%

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Lattice location and thermal stability of implanted Fe in ZnO

Rita

Wahl

Correia

et al. 2004

Applied Physics Letters

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The emission channeling technique was applied to evaluate the lattice location of implanted 59 Fe in singlecrystalline ZnO. The angular distribution of β − particles emitted by 59 Fe was monitored with a position-sensitive electron detector, following 60-keV low dose (2.0×10 13 cm −2 ) room-temperature implantation of the precursor isotope 59 Numerous technological breakthroughs are envisaged with the use of magnetic semiconductor materials that show a ferromagnetic ordering temperature at or above room temperature, e.g., spin transistors, ultradense nonvolatile memories and optical emitters with polarized output [1]. One class of materials, which are especially promising for applications, are diluted magnetic semiconductors, usually ternary systems of the type III 1-x -TM x -V or II 1-x -TM x -VI, where a 3d transition metal (TM) partly substitutes up to a few per cent of the group III or group II cations. It has been predicted by theory that the III-nitride semiconductors GaN and InN and the II-oxide semiconductor ZnO are suitable hosts to exhibit ferromagnetism close to or above room temperature [2,3]. In the case of ZnO, besides V, Cr, Mn, Co and Ni, Fe should also act as a ferromagnetic dopant [3][4][5]. Several reports on ferromagnetic systems based on ZnO can be found in the literature [1,[6][7][8][9][10][11][12][13][14]. Cases in which no ferromagnetic behavior was observed [7,[15][16][17][18] revealed systematic trends for the various transition metals, doping concentrations, and differences between n-and p-type ZnO, but also conflicting results between different authors. It was thus argued [11,14] that experimental reproducibility needs to be improved. The exact nature of the ferromagnetism also remains unclear [1,8,11,13]; among possible problems are the formation of metallic TM or TM-oxide clusters [9,[12][13][14]17] or magnetism from the substrate on which thin films are deposited [18]. Two recent review papers on the subject concluded that a more precise control of the TM dopant in the oxide and careful structural and microstructural analyses are needed [1,11].Experimentally TM dopants have been introduced both during ZnO powder synthesis [10,14,16] and growth of epitaxial thin films [6][7][8][9]11,15,18]. In addition, ion implantation is also actively being explored for TM doping of ZnO [1,12,13,19]. With respect to implantation, the questions that should be clarified, are: to what extent are TMs incorporated into the proper lattice sites (substituting for Zn atoms), what is the microstructure of substitutional TMs, and what are the optimum annealing conditions.We have partly addressed some of these issues in a previous study on Fe-implanted ZnO [20], which, however, focused on its optical properties. In that case, 56 Fe was implanted at 100 keV up to a fluence of 10 16 cm −2 into ZnO single crystals, followed by Rutherford backscattering spectroscopy (RBS) analysis of the damage and its recovery during thermal annealing. Since Fe in ZnO cannot be detected by RBS, particle-induced X-ray emiss...

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Magnetic Oxide Semiconductors

2006

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Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO 2 and transition metal-doped ZnO is discussed.

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Control of the electric and magnetic properties of ZnO films

Cited by 18 publications

References 18 publications

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Lattice location and thermal stability of implanted Fe in ZnO

Magnetic Oxide Semiconductors

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