Recent commercialization has increased the research interest in transparent conducting oxides like indium tin oxide being implemented in display technologies and sensors. A wide range of values (4.2-5 eV) for the work function of ITO films are reported in literature. In this paper, we present an approach to extract the work function of indium tin oxide films from MOSFET devices. RF sputtered indium tin oxide is used as a transparent gate electrode to fabricate n-MOSFET. For the fabrication of the MOSFET, a four-level mask is used. Electrical characterization is performed on these MOSFET devices. We obtained work function value in the range between 4.62-4.81 eV using this technique. © The Author Indium tin oxide (ITO) is highly conductive wide bandgap semiconductor and exhibits excellent light transmission characteristics in visible and infrared spectrum. 1 The high electrical conductivity is due to contribution of oxygen vacancies and substitutional tin (Sn). Due to these unique properties, they are used as passive elements such as transparent electrodes in light-emitting devices (LED), 2 solar cells 3 and liquid crystal displays. 4 ITO is also used in organic electroluminescent devices like organic-LED (OLED) as an anode or a hole-injecting electrode due to its characteristic high work function ( ). 5 The work function of ITO also plays a central role in determining the efficiency and performance of the OLEDs and organic photovoltaics (OPVs) through control of hole injection process. 6,7 ITO is commonly regarded as high work function electrode. In the past, ITO has been used as hole collecting electrode in OPVs, or hole injecting electrode in OLEDs. Currently, OPVs or OLEDs are gaining popularity for being implemented with an inverted structure for improved air stability. The work function of ITO is reduced to facilitate electron collection or injection in such inverted structures.In many such applications, the work function has a significant impact on the device performance as it affects the energy barrier height at the heterojunction interface. 8 Additionally, applications like thermionic emission and Schottky effect require work function to act as a critical factor to determine the amount of current that can be emitted from a hot cathode. 9,10 Furthermore, determination of work function is of great importance to understand wide range of surface phenomenon in numerous applications utilizing indium tin oxide films. Hence, the work function of ITO is of critical importance. Work function measurements are broadly divided into two categories, absolute and relative measurements. Relative measurements involve probing methods such as Kelvin probe method, which makes use of contact potential difference between the sample and the reference electrode. 11 Absolute measurements employ photoemission, thermionic emission, field emission etc, in order to eject the surface electrons and are extensively characterized to obtain the absolute work function values. The problems with these methods are that they are expensive and i...