Control of the Electrophysical Characteristics of Two-Barrier Silicon Structures With a Nanostructured Base Using Gamma Radiation

Abstract

During this experimental study, samples of double-barrier structures were irradiated with various doses from a 60Co source. The current-voltage characteristics of two-barrier structures from a silicon-based nanostructured base and the change in their spectral photocurrent before and after gamma irradiation were recorded and studied. Experimental results show that voltage values such as open-circuit voltage (VOC) as well as short-circuit current (ISC) and efficiency (η) change with the magnitude of the collection-dissipation voltage.