Abstract:The self-assembling of nanovoids with a precisely controlled depth at the GaN/GaAs interface is reported and their formation mechanism discussed. During the very early stages of GaN growth by molecular beam epitaxy over GaAs(100) misoriented substrates, nano-pits are formed by chemical reactions of gallium and nitrogen with a GaAs sacrificial layer. The GaAs sacrificial layer is grown on top of a GaAs/AlGaAs superlattice that is used to efficiently stop the in-depth etch and to promote lateral etching. Thus, a… Show more
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