Control of the light polarization in ferromagnetic diode structures InGaAs/GaAs/δ-Mn

Abstract

Electric-field influence on the polarization of the quantum well photoluminescence is studied in the diode structures InGaAs/GaAs/δ-Mn with narrow GaAs spacer dS = 2–5 nm at small magnetic field. Weakening of the circular polarization degree with increasing electric-field evidence about significant contribution of the stationary mechanism of the carriers’ polarization due to their exchange coupling with a nearby ferromagnetic δ-Mn-layer.