Control of the local magnetic states in graphene with voltage and gating

Gao, Fei; Zhang, Yu; He, Lin; Gao, Shiwu; Brandbyge, Mads

doi:10.1103/physrevb.103.l241402

Cited by 8 publications

(8 citation statements)

References 43 publications

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“…These two configurations do both have a spin-filtering effect, but one shows the maximal spin-filtering when p-doped, while the other when ndoped. For graphene vacancies, out-of-plane buckling is also known to be related to spin-polarization, due to the localized σ and quasi-localized π bands [56,57] We can identify four overall types of GBs in this dataset, which are summarized in table 2.…”

Section: Conductive Properties and Electronic Structurementioning

confidence: 99%

First principles study of electronic structure and transport in graphene grain boundaries

Bach Lorentzen,

Gao,

Bøggild

et al. 2024

2D Mater.

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Grain boundaries play a major role for electron transport in graphene sheets grown by chemical vapor deposition. Here we investigate the electronic structure and transport properties of idealized graphene grain boundaries (GBs) in bi-crystals using first principles density functional theory (DFT) and non-equilibrium Greens functions (NEGF).We generated \TotalStructs different grain boundaries using an automated workflow where their geometry is relaxed with DFT. We find that the GBs generally show a quasi-1D bandstructure along the GB.We group the GBs in four classes based on their conductive properties: transparent, opaque, insulating, and spin-polarizing and show how this is related to angular mismatch, quantum mechanical interference, and out-of-plane buckling. Especially, we find that spin-polarization in the GB correlates with out-of-plane buckling. We further investigate the characteristics of these classes in simulated scanning tunnelling spectroscopy and diffusive transport along the GB which demonstrate how current can be guided along the GB.

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Section: Conductive Properties and Electronic Structurementioning

confidence: 99%

First principles study of electronic structure and transport in graphene grain boundaries

Bach Lorentzen,

Gao,

Bøggild

et al. 2024

2D Mater.

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“…The dual contribution of magnetic moments of single vacancy defects offer the potential to manipulate the magnetism by changing the curvature of structures (Fig. 1(f )) [9][10][11]. STM is not only able to precisely identify the LDOS around defects but it can also be utilized to shape the nanostructures and carry out further in-situ investigations of nanostructures.…”

Section: Atomic-scale Defectsmentioning

confidence: 99%

Recent progresses on graphene-based artificial nanostructures: a perspective from scanning tunneling microscopy

Liu

2023

Quantum Front

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Graphene, a Dirac semimetal, exhibits the simplest lattice configuration and band structure in the world of two-dimensional materials. Due to its remarkable brevity and tunability, graphene becomes an ideal platform for studying the fundamental physics arising from the linear dispersion around the Dirac point, as well as for exploring symmetry-breaking orders in the flat band through playing with various artificial structures and external fields. In this review, we provide an overview of the nanoscale graphene model structures such as defects, quantum dots, strains, and superlattices in scanning tunneling microscopy measurements. Utilizing nanostructures in diverse dimensions, we present some behaviors of electrons near singularities of density of states from the perspective of scanning tunneling microscopy.

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“…The interaction between the localized σ states and the quasi-localized π states determines the local magnetic moment generated by the single-carbon vacancy in graphene. [20,25,26] With the enhancement of the out-of-plane configuration around the single-carbon vacancy via the tip-graphene van der Waals (vdWs) force, the σ -π interactions can be efficiently tuned. As a consequence, the energy separations of two spin-polarized states decrease from about 30 meV down to about 20 meV, and finally reach 0 meV when the height of the protrusion increases to above 140 pm, as shown in Fig.…”

Section: Single-carbon Vacancy Nitrogen-atom Dopantmentioning

confidence: 99%

Recent advances of defect-induced spin and valley polarized states in graphene

Jia¹,

Chen²,

He³

et al. 2022

Chinese Phys. B

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Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.

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Control of the local magnetic states in graphene with voltage and gating

Cited by 8 publications

References 43 publications

First principles study of electronic structure and transport in graphene grain boundaries

First principles study of electronic structure and transport in graphene grain boundaries

Recent progresses on graphene-based artificial nanostructures: a perspective from scanning tunneling microscopy

Recent advances of defect-induced spin and valley polarized states in graphene

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