Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals:  Research and Applications

Chaussende, Didier; Ucar, Magali; Auvray, Laurent; Baillet, Francis; Pons, M.; Madar, R.

doi:10.1021/cg050009i

Cited by 46 publications

(40 citation statements)

References 22 publications

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“…Keeping the same thermal environment (thermal gradient) and pressure, it allows to tune the supersaturation close to the seed by simply changing the TMS partial pressure in the CVD zone. This is particularly true working under CVD limited process conditions [18]. Since TMS is not adapted for deposition (i.e.…”

Section: Bulk Crystal Growthmentioning

confidence: 99%

Prospects for 3C-SiC bulk crystal growth

Chaussende

Mercier

Boulle

et al. 2008

Journal of Crystal Growth

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Despite outstanding properties, the development of 3C-SiC electronics continues to suffer from the lack of good quality, bulk 3C-SiC substrates. Up to now, there is no real seed and/or optimized growth processes. In this work, we address these two different issues. A two-step approach is shown, which couples the advantage of vapour-liquid-solid hetero-epitaxial growth of 3C-SiC on a 6H-SiC substrate for the seed formation and the ones of the continuous feed physical vapour transport method for the growth of the bulk material at reasonably high rate. Using such an approach, we could combine the elimination of the twin boundaries which systematically form in the 3C/6H-SiC epitaxial system, with getting a growth rate of about 0.2 mm/h for the bulk material. An evaluation of results is done, with respect to the change in growth conditions.

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Section: Bulk Crystal Growthmentioning

confidence: 99%

Prospects for 3C-SiC bulk crystal growth

Chaussende

Mercier

Boulle

et al. 2008

Journal of Crystal Growth

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“…This is the gaseous precursor concentration in the CVD zone. [10] This result suggests that some interaction exists between the CVD zone and the sublimation one. The aim of the present work is to investigate the thermochemistry of the process.…”

Section: Introductionmentioning

confidence: 95%

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Chaussende

Blanquet

Baillet

et al. 2006

Chemical Vapor Deposition

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The main trends that govern the continuous-feed physical vapor transport (PVT), bulk-crystal-growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

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“…1,2 Silicon carbide (SiC) is used in various applications because of its important properties such as high heat resistance, high thermal conductivity and to withstand high voltage. 3 It is a well-known promising substrate material for power electronic devices and light emitting devices (LED).…”

Section: Introductionmentioning

confidence: 99%

Kinetics of the thermal decomposition of tetramethylsilane behind the reflected shock waves between 1058 and 1194 K

Parandaman

Rajakumar

2016

J Chem Sci

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Thermal decomposition of tetramethylsilane (TMS) diluted in argon was studied behind the reflected shock waves in a single pulse shock tube (SPST) in the temperature range of 1058-1194 K. The major products formed in the decomposition are methane (CH 4 ) and ethylene (C 2 H 4 ); whereas ethane and propylene were detected in lower concentrations. The decomposition of TMS seems to be initiated via Si-C bond scission by forming methyl radicals (CH 3 ) and trimethylsilyl radicals ((CH 3 ) 3 Si). The total rate coefficients obtained for the decomposition of TMS were fit to Arrhenius equation in two different temperature regions 1058-1130 K and 1130-1194 K. The temperature dependent rate coefficients obtained are k total (1058-1130 K) = (4.61 ± 0.70) ×10 18 exp (−(79.9 kcal mol −1 ± 3.5)/RT) s −1 , k total (1130-1194 K) = (1.33 ± 0.19) ×10 6 exp (−(15.3 kcal mol −1 ± 3.5)/RT) s −1 . The rate coefficient for the formation of CH 4 is obtained to be k methane (1058-1194 K) = (4.36 ± 1.23) ×10 14 exp (−(61.9 kcal mol −1 ± 4.9)/RT) s −1 . A kinetic scheme containing 21 species and 38 elementary reactions was proposed and simulations were carried out to explain the formation of all the products in the decomposition of tetramethylsilane.

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Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

Cited by 46 publications

References 22 publications

Prospects for 3C-SiC bulk crystal growth

Prospects for 3C-SiC bulk crystal growth

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Kinetics of the thermal decomposition of tetramethylsilane behind the reflected shock waves between 1058 and 1194 K

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