Control of the VPE layer properties by the characteristics of the boundary layer

Abstract

The surface of epilayers grown by chemical vapor deposition (CVD) cannot be characterized insitu by RHEED, LEED, or Auger spectroscopy methods used for molecular beam epitaxy. But, unlike the epilayers grown by molecular beam epitaxy, those grown by CVD method have their crystallographic and electric properties controlled by the characteristics of a 4–20-μm-thick motionless gas layer called boundary layer. Samples of the boundary layer can be probed as a function of the distance above the growth surface and analyzed by gas phase chromatography in the case of silicon epitaxy in order to measure concentration and concentration gradient of pertinent chemical species close to the growth surface. This analysis allows us to explain the behavior of the growth rate, the kinetics of the incorporation of impurities and the crystallographic quality of eqilayers as a function of the growth parameters. General results can be used to explain most cold wall reactor behavior. GaAs and InP materials grown by the organometallic method are treated as examples.

Dominant rate process of silicon surface etching by hydrogen chloride gas

“…3 are the calculation using the k value of Eq. (12). Since the calculation is recognized to reproduce the etch rate changing with the silicon substrate temperature and the hydrogen chloride concentration in this study, the k value obtained in this study is considered to be applicable to describe the behavior of the silicon etch rate by hydrogen chloride gas, and is concluded to be independent of the surface concentrations of hydrogen chloride, hydrogen and trichlorosilane gases, as predicted in Eq.…”

“…Next, the dominant chemical process to etch the silicon substrate surface by hydrogen chloride gas is described based on the information obtained in this study and the existing studies [11][12][13][14][15]29]. In order to produce trichlorosilane and tetrachlorosilane, the successive reactions can be assumed as shown in Fig.…”

“…The silicon etch process by hydrogen chloride gas has been reported in a number of studies [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Although there are many experimental data of the silicon surface etch rate and behavior, they should be recognized as a group of fragments.…”

Organometallic Chemical Vapor Deposition of Gaas Using Novel Organometallic Precursors

“…Attempts to grow superior films by modifications of the OMCVD process include low pressure-, [30][31][32][33][34][35] plasma enhanced-, [36] rapid thermal-, [37] and hybrid MBE-OMCVD systems [38].…”