Control of thermal conditions during crystal growth by inverse modeling

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

“…Complemented by heat insulation the furnace is housed in a pressure vessel allowing for up to 10 bar. Again, the entire process including total and partial pressure definition in the vessel is completely computer controlled using growth programs optimized by inverse modeling [19]. Handling robots for loading and unloading the crucibles are available.…”

Detached growth behaviour of 2-in germanium crystals

“…The reduced interface deflection in a detachedgrown area can be explained by considering the high axial heat conductivity of the pBN crucible which is 62.7 W/(K m) [20] compared to 17.3 W/ (K m) of solid germanium near the melting point [21]. Hence, the crucible wall acts as a heat sink in the system.…”

Indium Phosphide Crystal Growth

“…Complete simulation of the growth system to take into account all the processes of heat transfer, including radiation losses, convective effects in the gas phase, melt flow and mixing, distributed in time and in full three-dimensional space remains an ambitious task. However, numerical computational packages such as CrysVUn ++ have been developed [26] that offer a time-dependent and 2-dimensional simulation of a growth environment. This has proved particularly useful for the physically much simpler arrangement found in a VGF furnace and has been demonstrated to be a valuable tool when used in conjunction with furnace design.…”