2018 IEEE Energy Conversion Congress and Exposition (ECCE) 2018
DOI: 10.1109/ecce.2018.8558140
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Control of Variable Frequency Drive PWM to Mitigate Motor Overvoltage Due to Double Pulsing in Reflected Wave Phenomenon

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Cited by 11 publications
(3 citation statements)
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“…Further, under high switching frequencies, a greater than twice of the inverter voltage can occur at the motor terminal at high modulation indices. This is known as the double pulsing effect, where a second voltage pulse arrives at the motor terminals before the first reflected pulse is fully decayed under closely spaced PWM pulses [11] [14] [15], causing higher than double the inverter output voltage at the motor terminal.…”
Section: Introductionmentioning
confidence: 99%
“…Further, under high switching frequencies, a greater than twice of the inverter voltage can occur at the motor terminal at high modulation indices. This is known as the double pulsing effect, where a second voltage pulse arrives at the motor terminals before the first reflected pulse is fully decayed under closely spaced PWM pulses [11] [14] [15], causing higher than double the inverter output voltage at the motor terminal.…”
Section: Introductionmentioning
confidence: 99%
“…High voltage ratings and fast switching speeds of SiC devices can increase the voltage stress on the insulation of motor windings. First, the reflected wave phenomenon in a SiC device-based motor drive is more severe than that in a Si device-based system due to the fact that SiC devices can switch higher voltages at faster speeds [10] [11]. Second, fast-switched voltages create uneven voltage distributions in motor winding insulations [12] [13].…”
Section: Introductionmentioning
confidence: 99%
“…With increased switching speeds and cable lengths, the motor terminal voltage can rise to twice or even four times of the dc-bus voltage [12]. The RWP is more pronounced in SiC inverter-fed motor drives, where the motor terminal voltage can be doubled with shorter cable lengths, compared to those used in equivalently rated Si-based drives, due to faster switching speed [13].…”
Section: Introductionmentioning
confidence: 99%