2023
DOI: 10.1103/physrevmaterials.7.073403
|View full text |Cite
|
Sign up to set email alerts
|

Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
8
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
5

Relationship

5
0

Authors

Journals

citations
Cited by 7 publications
(8 citation statements)
references
References 59 publications
0
8
0
Order By: Relevance
“…The device under study, consisting of a multiterminal JJ embedded in double-loop geometry, is displayed in Figure . It was realized in an InAs/Al heterostructure, , where the epitaxial Al layer was selectively removed to expose the III–V semiconductor below. We defined four superconducting terminals, labeled S, L, M, and R, coupled to a common semiconducting region.…”
Section: Resultsmentioning
confidence: 99%
“…The device under study, consisting of a multiterminal JJ embedded in double-loop geometry, is displayed in Figure . It was realized in an InAs/Al heterostructure, , where the epitaxial Al layer was selectively removed to expose the III–V semiconductor below. We defined four superconducting terminals, labeled S, L, M, and R, coupled to a common semiconducting region.…”
Section: Resultsmentioning
confidence: 99%
“…Experiments were performed on six devices. Figure (a) shows a false-colored scanning electron micrograph of Device 1, the principal device under study, which consisted of a planar SQUID fabricated in a heterostructure of InAs (pink) and epitaxial Al (blue). , The device was covered by a HfO 2 dielectric layer onto which Au gate electrodes (yellow) were deposited. The superconducting loop, defined in the epitaxial Al, contained a superconductor–normal semiconductor–superconductor (SNS) JJ and a narrow Al constriction.…”
Section: Resultsmentioning
confidence: 99%
“…The step-graded metamorphic buffer compensated for the lattice mismatch between the InP and InAs, while the GaAs capping layers provided a barrier for In diffusion into the superconducting layer. The 8 nm InAs layer hosted a two-dimensional electron gas (2DEG), buried 13.4 nm below the semiconductor surface, as measured by transmission electron microscopy . A 15 nm layer of Al was deposited onto the semiconductor surface, in situ without breaking the vacuum in the growth chamber.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Experiments were performed on four devices (Devices 1 to 4) defined in the same epitaxial heterostructure of InAs and Al, , measured in a dilution refrigerator with a base temperature below 10 mK. Figure a shows a false-colored scanning electron micrograph of Device 1, indicating the exposed InAs (pink), the epitaxial Al (blue), the gate electrodes (yellow), and the flux-bias lines (purple).…”
mentioning
confidence: 99%