Control strategies for balancing of series and parallel connected IGBT/diode modules

Silicon Carbide (SiC) MOSFETs enable enhanced performance of power converters in several applications. Parallel connection of SiC MOSFETs become mandatory for medium power applications due to the current rate of existing modules. A balanced current sharing between paralleled MOSFETs is desired to maximize the power capability of each device, maximizing the power capability of the whole system. This work studies the static current unbalance of two paralleled 1200V-400A SiC MOSFET modules with individual gate driver. Experimental measurements are done focused on parasitic inductance caused by electromechanical layout.

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Control strategies for balancing of series and parallel connected IGBT/diode modules

Cited by 2 publications

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Fully digitised, quasi-continuous working gate-drive unit for 1200V-IGBT

Fully digitised, quasi-continuous working gate-drive unit for 1200V-IGBT

Static Current Unbalance of Paralleled SiC MOSFET Modules in the Final Layout

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