2011
DOI: 10.7567/jjap.50.071101
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Controllability of Electrical Conductivity by Oxygen Vacancies and Charge Carrier Trapping at Interface between CoO and Electrodes

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Cited by 8 publications
(8 citation statements)
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“…With or without the presence of oxygen vacancy, these layers are metallic. These changes in the electronic properties of the TMO through the presence of rowed oxygen vacancy with charge carrier trapping were also observed for the CoO and Ta/CoO systems [34]. These two materials, CoO and HfO 2 , were known TMO materials used in RRAM TM .…”
Section: Electronic Properties and The Switching Mechanismmentioning
confidence: 66%
See 1 more Smart Citation
“…With or without the presence of oxygen vacancy, these layers are metallic. These changes in the electronic properties of the TMO through the presence of rowed oxygen vacancy with charge carrier trapping were also observed for the CoO and Ta/CoO systems [34]. These two materials, CoO and HfO 2 , were known TMO materials used in RRAM TM .…”
Section: Electronic Properties and The Switching Mechanismmentioning
confidence: 66%
“…These changes in the electronic properties of the TMO through the presence of the oxygen vacancy row with charge carrier trapping were also observed for the CoO and Ta/CoO systems. 38 These two materials, CoO and HfO 2 , are known TMO materials for use in RRAMä. It is therefore assumed that the switching mechanism is through the creation and disruption of a conduction path through the formation of and interruption of the oxygen vacancy row via oxygen vacancy migration from the interface to the lower layers.…”
Section: Resultsmentioning
confidence: 99%
“…Here, we sampled a known TMO material, Hf0 2 . Furthermore, we proposed a mechanism of resistive switching based on the migration of oxygen vacancies in between the TMO-electrode interface [5][6][7][8][9].…”
Section: Switching Mechanism In Rram Devicesmentioning
confidence: 99%
“…Next-Generation Memory Devices [71,72] Flash memories are presently widely used as nonvolatile memories for secondary storage, or long-term persistent storage. However, in order to improve the performance, e.g., speed and/or number of rewritings, research on next generation nonvolatile memory devices is becoming increasingly vigorous.…”
Section: A Step Closer Towards Commercialization Ofmentioning
confidence: 99%
“…However, the effects of roughness (e.g., oxygen vacancies) and charge carrier trapping have not been clarified yet. Here, by performing first-principles calculations based on the DFT, we analyze the properties of the TMO layers with oxygen vacancies and the effect of charge carrier trapping in the vicinity of the oxygen vacancies on the electronic properties [72]. In addition, we discuss the suitability of electrode materials by comparing the results for Ta, W and Pt.…”
Section: A Step Closer Towards Commercialization Ofmentioning
confidence: 99%