Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

Ismail, Muhammad; Abbas, Haider; Choi, Changhwan; Kim, Sungjun

doi:10.1016/j.apsusc.2020.147107

Cited by 70 publications

(41 citation statements)

References 51 publications

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“…In type 1, we used a compliance current (CC) of 1 mA for the forming and set processes (Figure 2a). The LRS and HRS can be adjusted by CC and reset stop voltage like many previous reports [39,40]. It is noted that the conductance changes gradually in homogeneous switching without CC in the Pt/Al2O3/TiN device.…”

Section: Resultsmentioning

confidence: 82%

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Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Ryu

Kim

2020

Nanomaterials

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In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching can be classified into two types depending on the compliance current. On top of that, the homogeneous switching is obtained by using a negative differential resistance effect before the forming or setting process in a negative bias. The variations of the low-resistance and high-resistance states in the homogeneous switching are comparable to the filamentary switching cases. However, the drift characteristics of the low-resistance and high-resistance states in the homogeneous switching are unstable with time. Therefore, the short-term plasticity effects, such as the current decay in repeated pulses and paired pulses facilitation, are demonstrated when using the resistance drift characteristics. Finally, the conductance can be increased and decreased by 50 consecutive potentiation pulses and 50 consecutive depression pulses, respectively. The linear conductance update in homogeneous switching is achieved compared to the filamentary switching, which ensures the high pattern-recognition accuracy.

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Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Ryu

Kim

2020

Nanomaterials

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“…Amidst a wealth of proposed hardware implementations spanning from digital [4][5] to neuromorphic [6][7], approaches based on memristive (RRAM) technology [8][9] [10] show considerable promise for increasing efficiency beyond the current state of art [11][12] [13]. RRAM devices are thin-film structures [14][15] that change their resistance under suitably strong voltage or current bias [16] [17]. Useful properties or RRAM include their low power and high speed operation [18], extreme scalability [19] and high memory density [20] amongst others.…”

Section: Introductionmentioning

confidence: 99%

Designing a bidirectional, adaptive neural interface incorporating machine learning capabilities and memristor-enhanced hardware

Shchanikov

Zuev

Bordanov

et al. 2021

Chaos, Solitons & Fractals

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“…However, due to indium and gallium both being critical raw materials, the use of zinc-tin oxide (ZTO) has started to be considered as a reliable substitute [15][16][17][18]. There are few reports on ZTO memristive devices with synaptic capabilities [19,20], and even fewer using exclusively ZTO as their switching medium [21,22], with all sharing a common bottom electrode configuration. Although patterned ZTO devices have previously been presented [23], synaptic emulation and area dependent switching was never achieved in a crosspoint configuration and the smallest device area has been reported as 100 µm 2 .…”

Section: Introductionmentioning

confidence: 99%

Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

Silva

Martins

Deuermeier

et al. 2021

Electronic Materials

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In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive devices with feature sizes as small as 25 µm2 is presented. The devices are patterned via lift-off with a platinum bottom contact and a gold-titanium top contact. An on/off ratio of more than two orders of magnitude is obtained without the need for electroforming processes. Set operation is a current controlled process, whereas the reset is voltage dependent. The temperature dependency of the electrical characteristics reveals a bulk-dominated conduction mechanism for high resistance states. However, the charge transport at low resistance state is consistent with Schottky emission. Synaptic properties such as potentiation and depression cycles, with progressive increases and decreases in the conductance value under 50 successive pulses, are shown. This validates the potential use of ZTO memristive devices for a sustainable and energy-efficient brain-inspired deep neural network computation.

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Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

Cited by 70 publications

References 51 publications

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Designing a bidirectional, adaptive neural interface incorporating machine learning capabilities and memristor-enhanced hardware

Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

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