Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible, low-voltage resistive switching

Zheng, Yichu; Yu, Dongfang; Lian, Huijun; Yuan, Haiyang; Zhou, Yu; Yang, Shuang

doi:10.1007/s40843-022-2367-0

Cited by 11 publications

(3 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There are also devices that use materials such as 2D materials and chalcogenides as resistive layer materials that exhibit excellent performance. [ 67,68 ]…”

Section: Resistive Layer Materialsmentioning

confidence: 99%

“…There are also devices that use materials such as 2D materials and chalcogenides as resistive layer materials that exhibit excellent performance. [67,68] Nonetheless, due to the inherent advantages of metal oxides, they are the most promising materials for widespread use and industrialization. In the following discussion, we will concentrate on metal oxide materials-based RRAM devices.…”

Section: Resistive Layer Materialsmentioning

confidence: 99%

See 1 more Smart Citation

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Pan,

He,

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Resistive random access memory (RRAM) has emerged as a competitive candidate for non‐volatile memory due to its high speed, low power consumption, simple structure, strong scalability and CMOS compatibility. In this paper, an overview of the electrodes and resistive layers is first discussed according to the material properties and structure of RRAM. Then, recent advances in the resistive mechanisms of RRAM are comprehensively discussed and evaluated based on experimental research results and fundamental physics principles. Then, the electrochemical metallization mechanism and the valence change metallization mechanism are thoroughly studied, as well as the formation, fracture and resistance state change behavior of conductive filaments in RRAM based on the ion motion type. Then, various electron transport‐dominated resistance mechanisms are reviewed, and electron transport and resistance switching in the space‐charge‐limited current mode are thoroughly examined using energy band theory. As a result, a theoretical reference is provided for the development of nano‐thin film devices.This article is protected by copyright. All rights reserved.

show abstract

“…There are also devices that use materials such as 2D materials and chalcogenides as resistive layer materials that exhibit excellent performance. [ 67,68 ]…”

Section: Resistive Layer Materialsmentioning

confidence: 99%

Section: Resistive Layer Materialsmentioning

confidence: 99%

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Pan,

He,

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Residual CFs may guide the growth of controlled CFs and resolve the issue by making them uniform [21]. Zheng et al [22] reported that the CFs act as channels for cation transport in their 2D layered perovskite RS insulating material. They also described the regulating filament and low voltage consumption perspectives of their 2D film for RRAM device applications.…”

mentioning

confidence: 99%

Theoretical occurrence of quantized chemistry of conduction mechanism in layered perovskite for the application of Resistive Random Access Memory devices

Sajid,

Ishaque,

Imran

et al. 2023

Int J of Quantum Chemistry

View full text Add to dashboard Cite

The Density Functional Theory (DFT) calculations interpreted the electronic and optical alteration of Ruddlesden–Popper layered perovskite (Sr3Zr2O7) with substitutional doping of Ti‐, Hf‐, and Ti+Hf‐ atoms in place of Zr‐atoms by generating the oxygen vacancies (Vos) defect. Formation energy and phonon calculations confirmed that the studied composites are dynamically stable, and the lattice parameters of the considered RP perovskite with and without vacancy defects did not change by introducing a small concentration of doped elements. The doped Sr3Zr2O7 composites show band gap tuning in the presence and absence of Vos, which was 3.31 eV in pristine form, and localized states near the Fermi line due to dopant and Vos, which confirmed the quantized conductance in all composites and may be beneficial for overcoming uniformity issues in nonvolatile memory devices. Isosurface charge density calculations also verified this result by depicting the physical mechanism of charge accumulation and depletion in the layers of RP perovskite in the vicinity of defects, resulting in residual conducting filaments guiding its growth and leading it to a low resistance state. The photosensitive response of this layered perovskite also confirmed its use for memory storage applications. The valuable outcomes of this study predicted that Sr3Zr2O7+Ti+Hf is the most stable and, hence, the best composite for nonvolatile RRAM device applications.

show abstract

Wide‐Bandgap Perovskite‐Inspired Materials: Defect‐Driven Challenges for High‐Performance Optoelectronics

Grandhi,

Hardy,

Krishnaiah

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

The remarkable success of lead halide perovskites (LHPs) in photovoltaics and other optoelectronics is significantly linked to their defect tolerance, although this correlation remains not fully clear. The tendency of LHPs to decompose into toxic lead‐containing compounds in the presence of humid air calls for the need of low‐toxicity LHP alternatives comprising of cations with stable oxidation states. To this aim, a plethora of low‐dimensional and wide‐bandgap perovskite‐inspired materials (PIMs) are proposed. Unfortunately, the optoelectronic performance of PIMs currently lags behind that of their LHP‐based counterparts, with a key limiting factor being the high concentration of defects in PIMs, whose rich and complex chemistry is still inadequately understood. This review discusses the defect chemistry of relevant PIMs belonging to the halide elpasolite, vacancy‐ordered double perovskite, pnictogen‐based metal halide, Ag‐Bi‐I, and metal chalcohalide families of materials. The defect‐driven optical and charge‐carrier transport properties of PIMs and their device performance within and beyond photovoltaics are especially discussed. Finally, a view on potential solutions for advancing the research on wide‐bandgap PIMs is provided. The key insights of this review will help to tackle the commercialization challenges of these emerging semiconductors with low toxicity and intrinsic air stability.

show abstract

Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible, low-voltage resistive switching

Cited by 11 publications

References 49 publications

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

Theoretical occurrence of quantized chemistry of conduction mechanism in layered perovskite for the application of Resistive Random Access Memory devices

Wide‐Bandgap Perovskite‐Inspired Materials: Defect‐Driven Challenges for High‐Performance Optoelectronics

Contact Info

Product

Resources

About