“…Compared to other CSD methods, PAD has four obvious advantages: (1) it can realize low-cost growth of wafer-scale materials [ 2 , 3 , 4 , 5 , 19 , 20 , 60 ]; (2) it can accurately adjust the thickness [ 2 , 5 , 17 , 26 , 27 , 28 ] with the precursor concentration and spin-coating rates [ 2 , 26 ]; (3) it can prepare nanostructures with various morphologies, including TFs [ 1 , 35 , 36 ], composites [ 32 , 37 , 38 ], epitaxial heterostructures [ 19 , 28 , 31 , 39 , 40 , 41 , 42 ], NWs [ 43 , 44 ], hybrid fibers [ 11 ], feathers-like nanostructures [ 45 , 46 ], multilayered structures [ 47 ], and superlattices [ 1 , 47 ]; and (4) it can prepare single and complex metal oxides [ 8 , 30 , 31 , 34 , 48 , 49 , 50 , 51 , 52 , 53 , 54 ], metal nitrides [ …”