Controllable growth of Ga2O3 hexagonal prism with pyramid end and monitoring size-dependent electron transfer process in perylene/Ga2O3 conjugate system via FLIM

Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing

“…According to previous reports, the peaks at 1117.85 eV and 1144.7 eV can be associated with Ga 2p 3/2 and Ga2p 1/2 , respectively. 38,39 The spinorbit splitting of 26.85 eV can be observed, corresponding to b-Ga 2 O 3 . 40 After Zn alloying and/or annealing, no obvious change can be found in the Ga 2p XPS spectra.…”