Controllable growth of two-dimensional materials on noble metal substrates

Abstract

Summary Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

Figure-of-Merit in 2D Insulators Pertaining to the Thermokinetics of Hexagonal Boron Nitride via Atmospheric-Pressure Chemical Vapor Deposition (APCVD) on Cu: Origin and Scenario

“…Nevertheless, other reports on the breakdown performances of mechanical exfoliated hBN films as well as hBN films grown by APCVD using borazine as the precursor did not exhibit the same mechanism . The employment of ammonia borane in our work instead of borazine is considered as limiting the introduction of B and N constituent elements to arrange hBN interlayers, which is the topmost disadvantage to form uniform multilayer hBN . Furthermore, both a-hBN and n-hBN displayed short-range disorder, making it challenging to distinguish between their structures.…”

“…40 The employment of ammonia borane in our work instead of borazine is considered as limiting the introduction of B and N constituent elements to arrange hBN interlayers, which is the topmost disadvantage to form uniform multilayer hBN. 41 Furthermore, both a-hBN and n-hBN displayed short-range disorder, making it challenging to distinguish between their structures. However, a-hBN demonstrated a hard-breakdown field and lacked a vibration mode, whereas n-hBN exhibited atomic vibrations according to the Raman spectrum and only displayed leakage current mode.…”

Surface induced electronic Berry curvature in Berry curvature free bulk materials

“…by applying uniaxial strains as shown above for HgTe (111). Since these noble metals are used as substrates of other 2D materials 18 , e.g. graphene 19 , a proper use of the latter can be another interesting path to reduce the symmetry and induce a finite SBCD.…”

Time-Resolved Growth of 2D WSe2 Monolayer Crystals

“…Among these synthesis approaches, CVD has been the most common synthesis technique, and the majority of crystal growth and kinetics studies have been performed in this process . For instance, the ultrafast growth dynamics studies in CVD have been done through numerous process modifications such as reverse flow process, substrate engineering such as the use of metal and catalytic as substrate, , and precursor modifications such as the use of salt. − However, crystal growth evolution is still a mystery due to the technical bottleneck of time-resolved growth in the current synthesis methods. Time-resolved growth is a powerful technique to shed light on the crystal evolution mechanisms from both spatial and temporal perspectives.…”