Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor

Xie, Qin; Pan, Xinqiang; Luo, Wenbo; Shuai, Yao; Zeng, Huizhong; Wang, Jiejun; Liu, Yuting; Yang, Xudong; Lv, Lu; Xu, Jiaqi; Yan, Hao; Wu, Chuangui; Zhang, Wanli

doi:10.1039/d3nr02395h

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2024

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Cited by 2 publications

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References 43 publications

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“…Secondly, due to the different energy levels of nitrogen vacancies and oxygen vacancies, nitride memristors require lower energy than oxide memristors when reading and writing data, which makes them an ideal component for low-power electronic devices. 147–150 In today's increasingly stringent low-power requirements, this feature is essential for extending the service life of electronic devices and improving energy efficiency.…”

Section: Discussionmentioning

confidence: 99%

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

Yang,

Tang,

Sun

et al. 2024

Mater. Horiz.

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Section: Discussionmentioning

confidence: 99%

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

Yang,

Tang,

Sun

et al. 2024

Mater. Horiz.

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Speckle Pattern Analysis of PVK:rGO Composite Based Memristor Device

Jamali,

Sajjadi,

Taherkhani

et al. 2024

Macro Materials & Eng

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The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. The device made of a sandwiched layer of poly(N‐ vinylcarbazole) and reduced graphene composite between asymmetric electrodes (ITO/PVK:rGO/Al) exhibits bistable resistive switching behavior. The performance of the memristor can be optimized by controlling the doped graphene oxide. To assess the device performance when it switches between ON and OFF states, optical characterization approaches are highly promising due to their non‐destructive and remote nature. Here, speckle pattern (SP) analysis to this end is introduced. SPs include a huge amount of information about their generating mechanism, which is extracted through statistical elaboration. SPs of the PVK:rGO in different states in situ and examine the conduction mechanism is acquired. The variations in the statistical parameters are attributed to the resistance state of the PVK:rGO with regard to the physical switching mechanism. The resistance/conduction state, in turn, depends on the activity and properties of PVK:rGO memristors, as well as the additional non‐uniformities induced through the variations of density of carriers. The present optical methodology can be potentially served as a bench‐top device for characterization purposes of similar devices during their operating.

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Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor

Abstract: Based on a novel differential pair consisting of two memristors (with opposite memristive behavior directions), which were realized by the modulation of oxygen vacancies, differential operation was implemented without subtraction circuits.

Cited by 2 publications

References 43 publications

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

Speckle Pattern Analysis of PVK:rGO Composite Based Memristor Device

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