Controllable morphology CoFe2O4/g-C3N4 p-n heterojunction photocatalysts with built-in electric field enhance photocatalytic performance

Enhanced Photocatalytic Activity of Anatase/Rutile Heterojunctions by Lanthanum and Tin Co-Doping

“…According to the formula E NHE = E Ag/AgCl + 0.197 [ 52 , 53 , 54 ], the E FB of LST could be calculated to be about −0.35 V vs. NHE. It is generally believed that the CB bottom (E CB ) is about 0.1 V more negative than the potential of E FB for n-type semiconductors [ 55 , 56 ]. Therefore, the E CB of LST could be determined to be −0.45 V vs. NHE.…”

Review on LSPR assisted photocatalysis: effects of physical fields and opportunities in multifield decoupling

“…Some scholars successfully facilitate the built-in electric eld based on nanosized heterojunctions. [94][95][96] As we already discussed, it is possible to realize the spontaneous diffusion of electrons between two semiconductors with different band structures. During this process, a consequent built-in electric eld is expected to be formed at the heterojunction interface, so as to inhibit the geminate recombination of the carriers.…”

“…The built-in electric fields contribute to a 7.2 fold increase in hydrogen evolution against pure CdSe. He et al 95 developed controllable morphology CoFe 2 O 4 /g-C 3 N 4 p–n heterojunction photocatalysts with the built-in electric field, which showed a high photocatalytic hydrogen evolution rate of 18.9 mmol g −1 h −1 .…”

0D/2D Co0.85Se/TiO2 p–n heterojunction for enhanced photocatalytic H2 evolution

“…8b). 58,59 Therefore, the conduction band (CB) position of TiO 2 is −0.88 V vs. NHE, and the valence band (VB) position of Co 0.85 Se is 0.69 V vs. NHE, because the CB position of the n-type semiconductor is 0.20 V more negative than its E fb , and the VB potential of the p-type semiconductor is 0.20 V more positive than its E fb . And the VB potential of TiO 2 and the CB potential of Co 0.85 Se are calculated to be 2.13 V vs. NHE and −1.01 V vs. NHE, respectively.…”