2019
DOI: 10.1039/c8ta09817d
|View full text |Cite
|
Sign up to set email alerts
|

Controllable nitrogen-doping of nanoporous carbons enabled by coordination frameworks

Abstract: Computation plays a significant role in guiding nitrogen doping into nanoporous carbons.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
26
1

Year Published

2020
2020
2023
2023

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 47 publications
(28 citation statements)
references
References 77 publications
1
26
1
Order By: Relevance
“…[ 19,21 ] In addition, due to the different polymerization processes, the nitrogen configuration was selectively tuned by varying the mass ratio of the nitrogen precursors. Compared with the conventional tuning method by controlling the annealing temperature, [ 38 ] our method provides a more controllable and effective approach for selectively modifying the nitrogen configuration on carbon materials with similar nanostructures. It is expected to serve as a decent material platform for studying the structure‐activity relation of N‐doped carbon electrocatalyst at atomic level.…”
Section: Resultsmentioning
confidence: 99%
“…[ 19,21 ] In addition, due to the different polymerization processes, the nitrogen configuration was selectively tuned by varying the mass ratio of the nitrogen precursors. Compared with the conventional tuning method by controlling the annealing temperature, [ 38 ] our method provides a more controllable and effective approach for selectively modifying the nitrogen configuration on carbon materials with similar nanostructures. It is expected to serve as a decent material platform for studying the structure‐activity relation of N‐doped carbon electrocatalyst at atomic level.…”
Section: Resultsmentioning
confidence: 99%
“…The peaks at 510 and 920 cm À1 correspond to silicon, and a peak at 297 cm À1 is related to cobalt [23]. Two board peaks located at about 1350 and 1591 cm À1 are assigned to the D and G band of the CNTs with I D /I G intensity of 0.9956, indicating the good graphitization degree and high electronic conductivity of the sample [37]. The surface compositions of Si@N-doped CNTs were confirmed by XPS, showing that the sample is composed of Si, C, N, O, and Co (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Optimizing the lattice properties of materials is common way for designing energy storage materials, such as doping [145] and vacancy. [146] Usually, lattice modification can achieve high electron conductivity and/or ionic diffusion coefficient and/or low average particle size of active materials.…”
Section: Lattice Optimizationmentioning
confidence: 99%