Controllable oxygen vacancies to enhance resistive switching performance in a ZrO<sub>2</sub>-based RRAM with embedded Mo layer

Wang, Sheng Yu; Lee, Dai Ying; Huang, Tai Yuen; Wu, Jia; Tseng, Tseung‐Yuen

doi:10.1088/0957-4484/21/49/495201

Cited by 82 publications

(36 citation statements)

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“…Few of them reported low-current operation <100 μA only, which is very challenging for real applications in future. Among other various metal oxides such as NiO x [74-76], TiO x [77-81], HfO x [29,38,82-86], Cu 2 O [87], SrTiO 3 [43,88], ZrO 2 [89-92], WO x [28,30,93], AlO x [94-97], ZnO x [39,98-101], SiO x [102,103], GdO x [104,105], Pr 0.7 Ca 0.3 MnO 3 [15,106], GeO x [107,108], and tantalum oxide (TaO x )-based devices [31,109-128] are becoming attractive owing to their ease of deposition using existing conventional systems, high thermal stability up to 1,000°C [115], chemical inertness, compatibility with CMOS processes, and high dielectric constant (ϵ = 25). Moreover, Ta-O system has only two stable phases of Ta 2 O 5 and TaO 2 with large solubility of O (71.43 to 66.67 at.%) above 1,000°C in its phase diagram [129].…”

Section: Reviewmentioning

confidence: 99%

TaO x -based resistive switching memories: prospective and challenges

2013

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Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production.

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Section: Reviewmentioning

confidence: 99%

TaO x -based resistive switching memories: prospective and challenges

2013

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“…In the SET process, while a positive bias voltage is applied on the TE, some oxygen vacancies drift from the Al/ZrO 2 interface into the ZrO 2 film to form some conducting filaments (CFs), and then the device is SET to the LRS [8]. On the other hand, in the RESET process, the CFs can be ruptured by a local Joule heating while large current flows through the CFs [4], i.e.…”

Section: Fig 2 (A) and (B)mentioning

confidence: 99%

Bipolar resistive switching in Al/ZrO<inf>2</inf>/Pt device fabricated at room temperature

Lin

Chang

Lin

2011

The 4th IEEE International NanoElectronics Conference

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ZrO 2 -based resistive random access memory possessing stable resistive switching is investigated in this work. The bipolar resistive switching found in Al/ZrO 2 /Pt device shows more promising for application due to its distinguishable switching voltages. Furthermore, good endurance and retention time with a large resistive ratio are also observed in the device. All the fabricating steps of the device were carried out at room temperature, and it is possible for application in flexible electronic equipments.Keywords-non-volatile memory; resistive random access memory; bipolar resistive switching; zirconium oxide; retention time. I. ITRODUCTIONRecently, a novel non-volatile memory, resistive random access memory (RRAM), has been studied extensively due to its great potential of non-volatility, low operation voltage, low power consumption, high operation speed, and simple structure [1]. In particular, ZrO 2 -based RRAM that is compatible with the conventional CMOS process has attracted more and more attention [2]. In the previous studies [3]-[7], Al/ZrO 2 /Pt structure devices showed a unipolar resistive switching behavior that could cause a switching error during performing the resistive switching. In this work, however, the device with bipolar resistive switching behavior is revealed. The device with bipolar resistive switching is more reliable for memory application. In addition, the Al/ZrO 2 /Pt RRAM device reported in this work was fabricated at room temperature (RT), and it is possible for application in flexible electronic equipments. II. EXPERIMENTSA 20-nm-thick Ti adhesion layer and a 60-nm-thick Pt bottom electrode (BE) were successively deposited on a SiO 2 /Si substrate by an electron beam evaporation. After that, an about 20-nm-thick ZrO 2 layer was deposited on the substrate by a radio-frequency magnetron sputtering system. Then, Al top electrodes (TEs) were deposited on the ZrO 2 layer by the sputtering system. The area of the TEs defined by a shadow mask was 4.9×10 -4 cm 2 . All of the fabricating processes were carried out at RT.Electrical properties of the Al/ZrO 2 /Pt device were recorded by Keithley 2400 source meter. During the electrical measurements, a bias voltage was applied on the Al TE, while the Pt BE was grounded, as shown in Fig. 1. (b) show the typical I-V curves of the Al/ZrO 2 /Pt device under unipolar and bipolar resistive switching, respectively. The device can be switched from high resistance state (HRS) to low resistance state (LRS) by applying a positive bias voltage, called SET process. The device can be switched back to the HRS by applying positive or negative bias, called RESET process. The RESET process is voltage polarity independent. During the SET process, a current compliance is set at 10 mA to prevent permanence degradation of the device; however, no current compliance is used at the RESET process. The SET and the RESET processes can be stably reproduced for many times. The resistive ratio between the HRS and the LRS is over 10 4 times. III. RESULTS AND DISCUSSION Fig....

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“…In addition, inserting an alien layer within the ZrO 2 film to produce an oxide heterostructure has been proved to be an effective method to improve the switching characteristics in ZrO 2 -based devices [34, 35]. In this work, we demonstrate a ZrO 2 /ZrO 2 − x /ZrO 2 -based resistive memory in which an unstoichiometric ZrO 2 − x layer is formed within the ZrO 2 layer by inserting a Zr layer.…”

Section: Introductionmentioning

confidence: 96%

Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

Huang

Yan

et al. 2017

Nanoscale Res Lett

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A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x/ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO2 layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the next-generation multistate high-performance memory.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2155-0) contains supplementary material, which is available to authorized users.

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Controllable oxygen vacancies to enhance resistive switching performance in a ZrO₂-based RRAM with embedded Mo layer

Cited by 82 publications

References 21 publications

TaO x -based resistive switching memories: prospective and challenges

TaO x -based resistive switching memories: prospective and challenges

Bipolar resistive switching in Al/ZrO<inf>2</inf>/Pt device fabricated at room temperature

Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

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Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

Cited by 82 publications

References 21 publications

TaO x -based resistive switching memories: prospective and challenges

TaO x -based resistive switching memories: prospective and challenges

Bipolar resistive switching in Al/ZrO<inf>2</inf>/Pt device fabricated at room temperature

Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

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Controllable oxygen vacancies to enhance resistive switching performance in a ZrO₂-based RRAM with embedded Mo layer