Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration

Abstract

Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration View the table of contents for this issue, or go to the journal homepage for more 2015 Mater. Res. Express 2 086302

Integrated multi-port circulators for unidirectional optical information transport

“…Note that all the physical properties needed to realize this structure (appreciable gain/loss and high nonlinearities) are amply available in this material platform. What made this multi-functionality possible on the same wafer, is a recently developed intermixing technique that allows one to spatially fine tune the bandgap energies so as to simultaneously accommodate semiconductor optical amplifiers (SOAs) along with lossy defocusing nonlinear components and transparent waveguide channels 27 . The demonstrated structure provides 23 dB isolation in a broadband fashion when used under pulsed mode conditions at telecom wavelengths (1550 nm).…”

“…Meanwhile, the energy gap in the ND domains has to be optimized with respect to the operating wavelength for attaining strong levels of defocusing nonlinearities. To simultaneously satisfy these somewhat conflicting requirements, a special post-growth bandgap fine-tuning process has been utilized 27 . The untreated regions (involving six In y Ga x As 1−x P 1−y quantum wells embedded in five barriers) have a bandgap energy of 0.813 eV, corresponding to an operating wavelength of 1525 nm (Fig.…”