Controllable resistance and temperature dependency of carbon nanotube bundles

Abstract

We report the controllable resistance of multiwalled carbon nanotube bundles for the possible application in nanoscale electronics. The resistance as well as the variation of resistance with temperature depends on the bundle diameter. The larger the diameter, smaller is the resistance and weaker is the variation of resistance with temperature that make the bundles advantageous in nanoscale electronics and in some other applications. As the resistance and the variation can be controlled by monitoring the bundle diameter, the temperature dependency of resistance can be employed in temperature thermometry.

Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

“…This is believed to be due to the Joule heating of NTs. 18,19 We have also investigated two more devices with two segments and found that high resistive segment breaks at a lower current. Raman spectra, taken prior to the breakdown experiments as shown in Fig.…”

Liquid flow-induced energy harvesting in carbon nanotubes: a molecular dynamics study

“…With the aforementioned mechanism of energy harvesting, the voltage induced by the nanofluidic flow can be estimated as V = RAsev, 15 where R is the CNT's resistance, s is the average charge carrier density, e is the electronic charge and is 1.6 Â 10 À19 C, A is the cross section area of the CNT, and v is the average drifting velocity of Cl À ions in the FSS. Based on previous experimental results, 38,39 the resistance, R, is related to the CNT geometry as R = 4R 0 L/(pD 2 ) where R 0 is the reference resistance of 400 O nm. 38 The temperature dependence of resistance is negligible (for the range of 300-360 K considered in this paper).…”

Electrical characteristics of multiwalled carbon nanotube arrays and influence of pressure

“…6(a). 15,16 The temperature distribution is almost uniform along the length of long metallic NTs as heat removal mainly takes place through the electrodes [ Fig. 6(a)].…”

“…[17][18][19][20] NT arrays can be suitable for low resistance interconnects as the resistance decreases as the diameter of the arrays is increased. 15 Here, we have reported two-probe measured transport properties of millimeter long arrays of multiwalled NTs (MWNTs) in the view point of technological applications and fundamental understandings. The current increase rapidly with voltage before the breakdown occurs.…”

“…It has been shown recently that the resistance of array decreases with increasing array diameter and temperature, 15,16 and NT arrays can be suitable for low resistance interconnects. Though the current carrying capacity of NTs is large, the resistance of NTs is typically in the range of k that may limit their applications.…”