2016
DOI: 10.1109/jsen.2015.2491322
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Controllable Synthesis and Gas-Sensing Properties of Zinc Oxide Nanocrystals With Exposed Different Percentage of Facets

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Cited by 17 publications
(5 citation statements)
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“…Likewise, the (104) and (110) planes of In 2 O 3 terminated with In 3+ ions on the exposed polar planes are also able to grasp the oxygen from the atmosphere and further aid in physical or chemical adsorption of NO 2 molecules. 40 The ZnO (002) plane terminated with Zn 2+ ions and surface anchored In 2 O 3 nanoislands forms the heterojunction structure. The In 3+ terminated planes with the exposed facets of (104) and (110) of In 2 O 3 boost the adsorption kinetics of NO 2 molecules at the heterojunctions.…”
Section: Resultsmentioning
confidence: 99%
“…Likewise, the (104) and (110) planes of In 2 O 3 terminated with In 3+ ions on the exposed polar planes are also able to grasp the oxygen from the atmosphere and further aid in physical or chemical adsorption of NO 2 molecules. 40 The ZnO (002) plane terminated with Zn 2+ ions and surface anchored In 2 O 3 nanoislands forms the heterojunction structure. The In 3+ terminated planes with the exposed facets of (104) and (110) of In 2 O 3 boost the adsorption kinetics of NO 2 molecules at the heterojunctions.…”
Section: Resultsmentioning
confidence: 99%
“…Especially, gas sensors have been playing an irreplaceable role in detecting harmful gases and disease diagnoses . Thus, numerous materials have been employed and explored as sensor materials, such as ZnO, SnO 2 , WO 3 , In 2 O 3 , and so on . ZnO is one of the most popular materials because of its good stability and high electron mobility .…”
Section: Introductionmentioning
confidence: 99%
“…73-1809). 47,49 The HNFs exhibited nanograined morphology due to their intrinsic porosity and abundant surface area formed during the calcination process which could emboss n-ZnO/p-Bi 2 O 3 and n-ZnO/n-In 2 O 3 HNFs as efficient sensing materials with reduced operating temperature. The results indicated the existence of heterojunctions in the ZnO/Bi 2 O 3 and ZnO/In 2 O 3 HNFs at the interfaces.…”
Section: Resultsmentioning
confidence: 99%