Controllable synthesis of AlN nanostructures and their photoluminescence

Shen, Longhai; Lv, Wei; Wang, Nan; Wu, Lijun; Qi, Dongli; Ma, Yuantai; Lei, Weiwei

doi:10.1039/c7ce01335c

Cited by 15 publications

(11 citation statements)

References 24 publications

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“…In order to confirm or deny the hypothesis on the existence of these supramolecular contacts and quantify their energies from a theoretical point of view, we carried out DFT calculations and performed topological analysis of the electron density distribution within the framework of Bader’s theory (QTAIM method) for models 1 ·(CHBr 3 ) 6 , 2 ·(CHBr 3 ) 6 , 2 ·(CHI 3 ) 6 , 1 ·(CHBr 3 ) 8 , 2 ·(CHI 3 ) 8 , and 2 ·(CHI 3 ) 8 supramolecular clusters (Supporting Information, Table S1). This approach has already been successfully used by us in studies of different noncovalent interactions (e.g., hydrogen, halogen and chalcogen bonding, metallophilic interactions, π-stacking) in various organic, organometallic and coordination compounds. ,,,,,− Results are summarized in Table ; the contour line diagrams of the Laplacian distribution ∇ 2 ρ( r ), bond paths, and selected zero-flux surfaces are shown in Figure . To visualize the studied noncovalent interactions, reduced density gradient (RDG) analysis was also carried out, and RDG isosurfaces were plotted (Figure ).…”

Section: Resultsmentioning

confidence: 99%

Pt/Pd and I/Br Isostructural Exchange Provides Formation of C–I···Pd, C–Br···Pt, and C–Br···Pd Metal-Involving Halogen Bonding

Baykov

Dabranskaya

Ivanov

et al. 2018

Crystal Growth & Design

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Complexes trans-[MCl2(NCNMe2)2] (M = Pt 1, Pd 2) were cocrystallized with CHBr3 and CHI3, forming 1:2 adducts isomorphic with previously reported trans-[PtCl2(NCNMe2)2]·2CHI3. In all cases, the C–X···M (X = Br, I; M = Pd, Pt) metal-involving halogen bonding together with numerous chloride-halomethane halogen and hydrogen bonds were identified by single-crystal XRD experiments. Further DFT calculations and topological analysis of the electron density distribution within the framework of QTAIM method at the M06/DZP-DKH level of theory confirmed the existence of these interactions and their noncovalent nature. Estimated energies of such contacts vary from 1.6 to 3.1 kcal/mol.

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Section: Resultsmentioning

confidence: 99%

Pt/Pd and I/Br Isostructural Exchange Provides Formation of C–I···Pd, C–Br···Pt, and C–Br···Pd Metal-Involving Halogen Bonding

Baykov

Dabranskaya

Ivanov

et al. 2018

Crystal Growth & Design

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“…These fragments can be classified as primary structures of the dendritic [127], (c) [128]) (d) [130]; B. 3D(1) structures: (a, b) [131], (c) [132] and (d) [133]; C. 3D(2) structures: (a) [135], (b) [136] (c, d, e) [137]. crystallisation process, in which the size of the smallest dendrites is ∼2-3 μm.…”

Section: -Fold and Multifold Symmetry Crystalsmentioning

confidence: 99%

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

Nersisyan

Lee

Kim

et al. 2019

International Materials Reviews

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Recent developments have seen breakthroughs in zero-, one-, two-, and three-dimensional AlN micro-and nanostructures, such as nanoparticles, nanowires, nanotubes, thin films and 3D multifold symmetry crystals. The attractive electrical, optical, and thermal properties of AlN make these materials irreplaceable for microelectrochemical systems (MEMS), surface acoustic waves (SAWs) and light emitting diodes (LED). The significant interest in the field of AlN nanostructure synthesis and application encouraged us to summarise the reported data to better understand the physical and chemical aspects of AlN crystal growth processes. Four main topics are covered in this review article: (1) the morphological diversity of AlN nanoand microstructures; (2) formation mechanisms and growth dynamics; (3) theoretical simulation of growth processes based on density functional theory (DFT) and phase field (PF) modelling approaches; (4) application and devices. This article also provides a perspective on future research relevant to AlN micro-and nanostructures.

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“…Columnar growth leads to a reduction in defect density, enhancement of light extraction and absorption, sensitivity in sensor applications, and makes the growth of core-shell heterostructures with larger emission volume possible. In the case of AlNbased nanostructures, recently several different approaches were implemented, such as by using Al self-catalyst [23], membrane template [24], ''spacefilling'' approach [25], or Ti mask [26]. However, for certain applications, like for nanowire-based light emitters or transistors, a complex post-growth processing is challenging, as well as a good control of size, homogeneity, orientation, polarity and doping over a large substrate area.…”

Section: Graphic Abstract Introductionmentioning

confidence: 99%

Mask-free three-dimensional epitaxial growth of III-nitrides

et al. 2020

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A novel catalyst-free and maskless growth approach is presented to form an ordered geometrical array of three-dimensional (3D) AlGaN/AlN microrods. The growth method is composed of a single growth step using metalorganic vapor phase epitaxy, achieving microstructures with homogeneous diameters, shapes and sizes over relatively large scale (on 2-in. wafer). The 3D AlGaN/AlN heterostructures are grown in a form of micro-sized columns elongated in one direction perpendicular to the substrate surface and with a hexagonal cross section. A careful examination of growth steps revealed that this technology allows to suppress coalescence and lateral overgrowth, promoting vertical 3D growth. Interestingly, two distinct morphologies can be obtained: honeycomb-like hexagonal arrangement perfectly packed and with twisted microrods layout, by controlling strain state in AlN buffer layers. Consequently, 3D AlGaN microrods on tensile-strained AlN templates show a 0° twisted morphology, while on compressive-strained templated a 30° twisted arrangement. Moreover, the optical and crystalline quality studies revealed that the top AlGaN layers of the examined 3D semiconductor structures are characterized by a low native point-defect concentration. These 3D AlGaN platforms can be applied for light emitting devices or sensing applications. Graphic abstract

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Controllable synthesis of AlN nanostructures and their photoluminescence

Abstract: AlN nanostructures with controllable morphologies are synthesized on a Si substrate with an Al particle layer as a self-catalyst via a chemical vapor deposition (CVD) technique under atmospheric pressure.

Cited by 15 publications

References 24 publications

Pt/Pd and I/Br Isostructural Exchange Provides Formation of C–I···Pd, C–Br···Pt, and C–Br···Pd Metal-Involving Halogen Bonding

Pt/Pd and I/Br Isostructural Exchange Provides Formation of C–I···Pd, C–Br···Pt, and C–Br···Pd Metal-Involving Halogen Bonding

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

Mask-free three-dimensional epitaxial growth of III-nitrides

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