Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Shim, Jaewoo; Bae, Sang Hoon; Kong, Wei; Lee, Doyoon; Qiao, Kuan; Nezich, Daniel; Park, Yong Ju; Zhao, Ruoyu; Sundaram, S.; Li, Xin; Yeon, Han-Wool; Choi, Chanyeol; Kum, Hyun; Yue, Ruoyu; Zhou, Guanyu; Ou, Yunbo; Lee, Kyusang; Moodera, Jagadeesh S.; Zhao, Xuanhe; Ahn, Jong Hyun; Hinkle, Christopher L.; Ougazzaden, A.; Kim, Jeehwan

doi:10.1126/science.aat8126

Cited by 258 publications

(246 citation statements)

References 36 publications

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“…Employing the interfacial toughness between Ni and WS 2 , higher than the vdW force between WS 2 layers, the top WS 2 layer is peeled off by sacrificial Ni layer. The epitaxial grown thick WS 2 layers is simply exfoliated into monolayer after covered by sacrificial Ni layers on both top and bottom sides . This layer‐resolved splitting technique demonstrates the precise isolation of monolayer 2D materials at the wafer scale, through which the wafer‐scale integration and fabrication of 2D devices can be fulfilled.…”

Section: Production Of 2dhsmentioning

confidence: 99%

Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

Wang

et al. 2019

InfoMat

123

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It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.

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Section: Production Of 2dhsmentioning

confidence: 99%

Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

Wang

et al. 2019

InfoMat

123

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“…Incorporating growth and processing techniques that are commonplace in the flexible electronics community such as low temperature vacuum deposition or rapid thermal/photonic annealing may provide the mechanisms necessary to incorporate high quality materials on soft and compliant substrates, which cannot accommodate high growth temperatures . Alternatively, the direct transfer of materials synthesized on conventional substrates (i.e., SiO 2 /Si or sapphire) to flexible ones, through 2D van der Waals liftoff using materials such as h ‐BN, have been shown to enable high performing flexible electronic systems and may provide the key to flexible, low power electronics based on elemental 2D materials …”

Section: Electronics and Sensingmentioning

confidence: 99%

Emerging Applications of Elemental 2D Materials

et al. 2019

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As elemental main group materials (i.e., silicon and germanium) have dominated the field of modern electronics, their monolayer 2D analogues have shown great promise for next‐generation electronic materials as well as potential game‐changing properties for optoelectronics, energy, and beyond. These atomically thin materials composed of single atomic variants of group III through group VI elements on the periodic table have already demonstrated exciting properties such as near‐room‐temperature topological insulation in bismuthene, extremely high electron mobilities in phosphorene and silicone, and substantial Li‐ion storage capability in borophene. Isolation of these materials within the postgraphene era began with silicene in 2010 and quickly progressed to the experimental identification or theoretical prediction of 15 of the 18 main group elements existing as solids at standard pressure and temperatures. This review first focuses on the significance of defects/functionalization, discussion of different allotropes, and overarching structure–property relationships of 2D main group elemental materials. Then, a complete review of emerging applications in electronics, sensing, spintronics, plasmonics, photodetectors, ultrafast lasers, batteries, supercapacitors, and thermoelectrics is presented by application type, including detailed descriptions of how the material properties may be tailored toward each specific application.

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“…Therefore, some researchers have been studying the large‐scale growth of 2D materials. For example, the implementation of high‐throughput production of wafer‐scale single atomic layer 2D materials . At the same time, they also realized high‐throughput manufacturing of 2D heterostructures at the wafer, which is of great practical significance for the integrated application of 2D materials.…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

130

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Cited by 258 publications

References 36 publications

Two‐dimensional heterostructure promoted infrared photodetection devices

Two‐dimensional heterostructure promoted infrared photodetection devices

Emerging Applications of Elemental 2D Materials

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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