The transport layer is one of the main factors affecting the stability and efficiency of all-inorganic perovskite solar cells. It is still difficult to produce an HTL with the required properties using the present production methods. Based on the solubility, a porous transport layer coated with CuI on an inorganic perovskite layer has been proposed. CuI inclusion promotes an energy level alignment that reduces ionic loss, inhibits charge carrier recombination, and improves hole extraction efficiency. CuI addition corrects surface imperfections of the perovskite and avoids defects caused by Spiro-OMeTAD pinholes, leading to excellent hole extraction performance and fast hole mobility rates. Due to this adjustment, power conversion efficiency (PCE) is improved by 26%, resulting in an optimized PCE of 12.39%. The filling factor (FF) and the short circuit current density (Jsc) were increased to 17.93 mA/cm2 and 0.71, respectively. In addition, the stability of CuI is improved due to the barrier effect of inorganic Cul on air and water entering the perovskite layer. The results show that CuI doped hole transport layer film is a promising method to realize high performance and air-stable PSC.