Controlled erbium incorporation and photoluminescence of Er-doped Y2O3

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We report in this work the optical properties of Er 3+ -doped Y 2 O 3 , deposited by radical enhanced atomic layer deposition. Specifically, the 1.53 m absorption cross section of Er 3+ in Y 2 O 3 was measured by cavity ring-down spectroscopy to be ͑1.9± 0.5͒ ϫ 10 −20 cm 2 , about two times that for Er 3+ in SiO 2 . This is consistent with the larger Er 3+ effective absorption cross section at 488 nm, determined based on the 1.53 m photoluminescence yield as a function of the pump power. X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy were used to determine the film composition, which in turn was used to analyze the extended x-ray absorption fine structure data, showing that Er was locally coordinated to only O in the first shell and its second shell was a mixture of Y and Er. These results demonstrated that the optical properties of Er 3+ -doped Y 2 O 3 are enhanced, likely due to the fully oxygen coordinated, spatially controlled, and uniformly distributed Er 3+ dopants in the host. These findings are likely universal in rare-earth doped oxide materials, making it possible to design materials with improved optical properties for their use in optoelectronic devices.

show abstract

“…4. This value is consistent with what we reported earlier 40 on samples with higher doping concentrations ͑9 at. % Er, close to the 10 at.…”

Section: Resultssupporting

confidence: 83%

Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition

Hoang¹,

Van²,

Sawkar-Mathur³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Various approaches have been proposed to control the spatial distribution of the doping elements, such as employing precursors with a low growth rate per cycle, a subsaturating dopant precursor exposure, a surface functionalization step or inducing steric hindrance effect. [15][16][17][18] As reported in Ref. 19 the composition and electrical properties of spatial ALD ZnO:Al have been tuned accurately at high growth rates (>0.2 nm/s) by co-injecting the metal precursors.…”

mentioning

confidence: 95%

Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Illiberi

Scherpenborg

Roozeboom

et al. 2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm−3), low resistivity (3 mΩ·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (< 7 mΩ·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).

show abstract

“…A classic example is the ALD of metal oxides from b-diketonate precursors, such as those with acac (acetylacetonate), [97][98][99][100] hfac (1,1,1,5,5,5-hexafluoroacetylacetonate), 101,161,162 and thd (2,2,6,6,-tetramethyl-3,5-heptanedionato) 102,104,[275][276][277][278][279] ligands. Such precursors require more reactive co-reactants as they show no or low reactivity with H 2 O (in essence, they do not readily undergo hydrolysis reactions).…”

Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

742

537

View full text Add to dashboard Cite

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

show abstract

Controlled erbium incorporation and photoluminescence of Er-doped Y2O3

Cited by 71 publications

References 16 publications

Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition

Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition

Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Contact Info

Product

Resources

About