Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

Powell, J. A.; Petit, J. B.; Edgar, James H.; Jenkins, I. G.; Matus, L. G.; Yang, Jinwei; Pirouz, P.; Choyke, W. J.; Clemen, L. L.; Yoganathan, M.

doi:10.1063/1.105587

Cited by 128 publications

(34 citation statements)

References 7 publications

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“…To realize useful devices, high-quality AlN films on {111} diamond and sharp AlN/diamond {111} interfaces are essential. For GaN/SiC heterostructures, previous studies have revealed that surface steps promote extended crystal defects in heteroepitaxial films grown on SiC [163][164][165]. Bassim et al reported that very low dislocation densities were achieved in GaN films on step-free SiC mesa surfaces [166], and ultraviolet luminescence of GaN pn-junction diodes fabricated on the step-free SiC {0001} surfaces was improved relative to that on atomically flat SiC surfaces with atomic steps [167].…”

Section: Atomically Step-free Surfacesmentioning

confidence: 96%

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

Tokuda

2014

Topics in Applied Physics

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Both carbon and silicon are group IV members, but carbon has the smaller atomic number. Diamond, with the same crystalline structure as that of silicon, is expected to act as the basic material for the next generation of high-power electronic, optoelectronic, bio/chemical electronic, quantum computing devices, etc. This is because diamond exhibits electrical properties similar to those of silicon, while having superior physical properties. In this chapter, the author reviewed and discussed the homoepitaxial growth of high-quality single-crystal diamond films with atomically flat surfaces, by using plasma-enhanced chemical vapor deposition (PECVD).

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Section: Atomically Step-free Surfacesmentioning

confidence: 96%

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

Tokuda

2014

Topics in Applied Physics

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“…25 In our previous study, we investigated the effect of different conditions during the temperature ramp-up prior to epitaxial growth on the carrot defect formation during epitaxial growth on 8 off axis substrates. 26 Also a HCl in situ etching prior to epitaxial growth at a temperature 50 C higher than the growth temperature for the growth of about 20 lm thick 4H-SiC epitaxial layers grown on 4 off axis substrates has been used.…”

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confidence: 99%

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Yazdanfar

Ivanov

Pedersen

et al. 2013

Journal of Applied Physics

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By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 lm thick epitaxial layers with excellent morphology were grown on 4 off-axis SiC substrates at growth rates exceeding 100 lm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H 2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 lm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4 off axis SiC substrates. V C 2013 AIP Publishing LLC.

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“…The role of surface defects in nucleation of 3C-SiC becomes important on SiC{0001} substrates with small off-angles [32]. Note that spiral growth around threading screw dislocations (TSDs) is not considered in the present model.…”

Section: Theoretical Model Of Sic Homoepitaxymentioning

confidence: 99%

“…The disturbance or instability of step-flow growth can result in nucleation of 3C-SiC and/or stacking fault generation. In an early study by Powell et al [32], homoepitaxy of 6H-SiC on 0.2 ∘ off-axis 6H-SiC(0001) was demonstrated by removal of defective sites by appropriate in situ HCl∕H 2 etching. This process was refined, and relatively large area homoepitaxy of 6H-SiC on nearly on-axis (0001) substrates was achieved under Si-rich conditions [189].…”

Section: Sic Homoepitaxy On Nearly On-axis {0001}mentioning

confidence: 99%