2013
DOI: 10.1002/anie.201302767
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Controlled Growth of Dichlorogermanium Oligomers from Lewis Basic Hosts

Abstract: To branch or not to branch: A mild stepwise route to various linear and branched (GeCl2)x oligogermylenes supported by Lewis bases is reported, including the carbene‐bound Ge4 complex NHC⋅GeCl2Ge(GeCl3)2 (see picture). Dipp=2,6‐iPr2C6H3, NHC=N‐heterocyclic carbene.

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Cited by 78 publications
(57 citation statements)
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“…Indeed, the reaction of 2 and 3 in a 1:1 ratio in toluene at room temperature afforded the NHC-stabilized (chlorosilyl)chlorogermylene 1 which was isolated as a crystalline compound (Scheme 2). We did not obtain any indication for the formation of donor-acceptor adducts between 2 and 3 or rearrangement products as often described for reactions of silylenes and germylenes [29,30]. Compound 1 was characterized in solution state by NMR spectroscopy as well as in solid state by single crystal X-ray molecular structure determination.…”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…Indeed, the reaction of 2 and 3 in a 1:1 ratio in toluene at room temperature afforded the NHC-stabilized (chlorosilyl)chlorogermylene 1 which was isolated as a crystalline compound (Scheme 2). We did not obtain any indication for the formation of donor-acceptor adducts between 2 and 3 or rearrangement products as often described for reactions of silylenes and germylenes [29,30]. Compound 1 was characterized in solution state by NMR spectroscopy as well as in solid state by single crystal X-ray molecular structure determination.…”
Section: Resultsmentioning
confidence: 98%
“…1 H and 13 C{ 1 H} NMR spectra were referenced to the peaks of residual protons of the deuterated solvent ( 1 H) or the deuterated solvent itself ( 13 C{ 1 H}). 29 Si{ 1 H} NMR spectra were referenced to external SiMe 4 .…”
Section: General Informationmentioning
confidence: 99%
“…Such insertion reactions similarly take place during the formation of Si(SiCl 3 ) 4 via the amine‐induced disproportionation of Si 2 Cl 6 and recently Rivard et al. described a comparable insertion reaction in germanium chemistry during the formation of (GeCl 3 ) 2 Ge–GeCl 2 –IDIPP …”
Section: Figurementioning
confidence: 93%
“…Such insertion reactions similarly take place during the formation of Si(SiCl 3 ) 4 via the amine-induced disproportionation of Si 2 Cl 6 [13] and recently Rivard et al described ac omparable insertionr eaction in germanium chemistry duringt he formation of (GeCl 3 ) 2 Ge-GeCl 2 -IDIPP. [18] All of the silicon atoms in 1 have different coordination numbers. Thereby,t he central silicon atom (Si2) with coordination number three exhibits ap yramidal environment( sum of bond angles3 09.938).…”
mentioning
confidence: 99%
“…This GeCl 2 ⋅dioxane complex is a common precursor for further substitution or reductive coupling reactions. Starting from IPr‐GeCl 2 (IPr=[(HCNDipp) 2 C]; Dipp=2,6‐ i Pr 2 C 6 H 3 ), Rivard and co‐workers developed a new synthetic bottom‐up method for the synthesis of oligomeric subhalides (GeCl 2 ) x ( x ≥2) in which GeCl 2 ⋅dioxane is added to give the branched polygermane IPr‐GeCl 2 ‐Ge(GeCl 3 ) 2 via the digermane IPr‐GeCl 2 ‐GeCl 2 (Scheme ) …”
Section: Divalent Halides Of Germanium Tin and Leadmentioning
confidence: 99%