Controlled Growth of Well-Aligned GaS Nanohornlike Structures and Their Field Emission Properties

Sinha, Godhuli; Panda, Subhendu K.; Datta, Anuja; Chavan, Padmakar G.; Shinde, Deodatta R.; More, Mahendra A.; Joag, Dilip S.; Patra, Amitava

doi:10.1021/am200339v

Cited by 34 publications

(29 citation statements)

References 41 publications

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“…It has been proved by several studies that semiconductor nanostructures of GaS, 32 ZnO, 33 SiC, 34 and CNT 35 show efficient FE behaviors and their turn-on elds strongly depend on aspect ratio. The turn-on eld and threshold eld are dened as the eld required to generate an emission current density of $10 mA cm À2 and $100 mA cm À2 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Ag decorated topological surface state protected hierarchical Bi₂Se₃nanoflakes for enhanced field emission properties

et al. 2015

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In this paper, we report an economical and low temperature synthesis route of Ag nanoparticle decorated hierarchical Bi 2 Se 3 nanoflakes (NFs) over a large surface area of Si substrate in an open atmosphere. Detailed analysis of the field emission (FE) properties indicate that the hierarchical Bi 2 Se 3 NFs shows reasonable FE properties due to their high aspect ratio and well-aligned uniform distribution. For improving the FE properties of as-synthesized Bi 2 Se 3 NFs, silver (Ag) nanoparticles (NPs) have been attached to its surfaces. Ag NP attached Bi 2 Se 3 NFs exhibit superior FE properties compared with pure Bi 2 Se 3 NFs. The turn-on field is found to be reduced from 3.83 V mm À1 to 2.03 V mm À1 after attachment of the Ag NPs.Finite element analysis with ANSYS Maxwell simulation software also confirms that Ag decorated Bi 2 Se 3 NFs are better field emitters than Bi 2 Se 3 NFs. The enhanced FE properties of the Ag attached Bi 2 Se 3 heterostructure is attributed to the electron injection from Ag nanoparticles to Bi 2 Se 3 and also to the formation of extra emitting sites at the edge of the NFs. Finally, X-ray photo emission spectroscopy (XPS) confirms that unlike most of the previous reports, surface states are appreciably stable and strongly protected from any surface reactivity and oxidation, even if subjected to adverse atmosphere or high magnitude electric fields.

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Section: Resultsmentioning

confidence: 99%

Ag decorated topological surface state protected hierarchical Bi₂Se₃nanoflakes for enhanced field emission properties

et al. 2015

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“…This combination gives rise to strongly anisotropic optical, electrical and mechanical properties, and makes GaS -which is a wide-bandgap semiconductor 6 -a promising candidate for assorted optoelectronic devices and sensors, e.g., nearblue light-emitting diodes 7 and¯eld-emission-based devices. 8,9 In addition, nanomaterials from layered metal sul¯des in general, and GaS in particular, can intercalate foreign atoms, yielding electrochemical properties that render them suitable for rechargeable secondary batteries. 10 Theoretical calculations 11,12 and synthetic routes for the generation of hollow-core INT-GaS [13][14][15] and IF-GaS 16 have been reported, along with descriptions of the synthesis of GaS nanowires and nanobelts.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Pb@GaS Core–Shell Fullerene-Like Nanoparticles and Nanotubes

Brontvein

Houben

Popovitz‐Biro

et al. 2017

NANO

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New types of core-shell nanoparticles are reported: Pb@GaS fullerene-like and nanotubular structures, achieved via the continuously high reactor temperatures and ultra-hot stronggradient annealing environments created by highly concentrated sunlight. Structural and chemical characterizations suggest a formation mechanism where vaporized Pb condenses into nanoparticles that are stabilized as they become covered by molten GaS, the ensuing crystallization of which creates the outer layers. Hollow-core GaS fullerene-like nanoparticles and nanotubes were also observed among the products, demonstrating that a single solar procedure can generate a variety of core-shell and hollow nanostructures. The proposed formation mechanisms can account for their relative abundance and the characterization data.

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“…While stable modifications of other Ga and In monochalcogenides possess a small difference between direct and indirect band gaps, GaS is the semiconductor with obvious indirect gap of 2.59 eV at room temperature and a direct gap of 3.0 eV at 77 K . The latter in combination with the highly anisotropic crystal lattice characterizes the compound as a good media for formation of a high‐temperature electron‐hole liquid and reveals its potential as the main component of different optoelectronic devices like the near‐blue light emitting diodes or field emission based devices . The emission of GaS can be tuned not only by impurities or vacancies, yet, blue‐shifted using quantum confinement of single layer .…”

Section: Introductionmentioning

confidence: 99%

Structure and Stability of GaS Fullerenes and Nanotubes

Enyashin

Brontvein

Seifert

et al. 2016

Israel Journal of Chemistry

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Recently, polyhedral; octahedral fullerene‐like structures and cylindrical nanotubes of gallium sulfide have been produced in far from equilibrium conditions using a high power solar synthesis and Pb as growth promoter. Their exact atomistic structure and their formation path remain unknown. Here, the models of fullerenes and nanotubes are designed for both stable β‐ and metastable γ‐polymorphs of GaS. Their stability and electronic properties were investigated as a function of both the morphology and size using density‐functional tight‐binding method. The results manifest that, construction principles for GaS fullerenes are different from those for “classical” dichalcogenide fullerenes. In contrast to the bulk, the kinetic stability of fullerene‐like structures of the γ‐GaS phase is found to be larger, than that for β‐GaS which is ascribed to a sterical specificity of intersected γ‐GaS layers. We predict that, the γ‐GaS phase should arise at least as an intermediate state during the synthesis of polyhedral GaS nanoparticles. Notwithstanding the polymorphic type, the size and the morphology of GaS nanostructures, they are all semiconductors. Finally, the possible composition and electronic properties of Pb||GaS interface within the Pb@GaS nanoparticles are discussed.

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Controlled Growth of Well-Aligned GaS Nanohornlike Structures and Their Field Emission Properties

Cited by 34 publications

References 41 publications

Ag decorated topological surface state protected hierarchical Bi₂Se₃nanoflakes for enhanced field emission properties

Ag decorated topological surface state protected hierarchical Bi₂Se₃nanoflakes for enhanced field emission properties

Synthesis and Characterization of Pb@GaS Core–Shell Fullerene-Like Nanoparticles and Nanotubes

Structure and Stability of GaS Fullerenes and Nanotubes

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Controlled Growth of Well-Aligned GaS Nanohornlike Structures and Their Field Emission Properties

Cited by 34 publications

References 41 publications

Ag decorated topological surface state protected hierarchical Bi2Se3nanoflakes for enhanced field emission properties

Ag decorated topological surface state protected hierarchical Bi2Se3nanoflakes for enhanced field emission properties

Synthesis and Characterization of Pb@GaS Core–Shell Fullerene-Like Nanoparticles and Nanotubes

Structure and Stability of GaS Fullerenes and Nanotubes

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Product

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Ag decorated topological surface state protected hierarchical Bi₂Se₃nanoflakes for enhanced field emission properties

Ag decorated topological surface state protected hierarchical Bi₂Se₃nanoflakes for enhanced field emission properties