Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

Longo, M.; Magnanini, R.; Parisini, A.; Tarricone, Luciano; Carbognani, A.; Bocchi, C.; Gombia, E.

doi:10.1016/s0022-0248(02)01846-8

Cited by 28 publications

(18 citation statements)

References 15 publications

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“…1 and 2, respectively; a similar investigation for the Carbon intrinsically doped samples has already been published and discussed [12,13]. Just below RT, the usual transport into the valence band is dominant, whereas the low temperature electrical data indicate the activation impurity band conduction, consistently with the photoluminescence investigation discussed in the following.…”

Section: Electrical Measurementssupporting

confidence: 72%

“…When the doping overcomes the level of about 10 18 cm -3 , p(T) and µ(T) curves become T-independent, as for a degenerate hole gas. A simultaneous fit of mobility and hole density data was performed as described in [12,13], for conduction through the extended states. The usual scattering mechanisms and the Wiley approach to treat the valence band complexity were considered: to our knowledge, only a few works in the literature have been devoted to the fitting of the electrical data vs. temperature in GaAs:Zn samples [16].…”

Section: Electrical Measurementsmentioning

confidence: 99%

“…On the other hand, in the case of extrinsic doping, limitations related to compensation effects, hydrogen passivation and low lifetime for minority carriers, have been reported when Carbon tetrabromide (CBr 4 ) or Carbon tetrachloride (CCl 4 ) are used [10]; however, in the intrinsic Carbon doping, some drawbacks related to the surface morphology of heavily doped layers have been reported [11]. We have previously demonstrated that it is possible to control the intrinsic Carbon doping in MOVPE grown GaAs layers by using trimethyl gallium (TMGa) and the less hazardous, high-purity As source tertiary buthyl arsine (TBAs) [12,13] in a wide range of hole concentrations (between 10 14 and 10 18 cm -3 ). In this work, we present an analysis of the electrical and optical quality of p-doped GaAs layers, MOVPE grown by TMGa and TBAs, extrinsically doped by Zinc.…”

Section: Introductionmentioning

confidence: 99%

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Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Begotti¹,

Ghezzi²,

Longo³

et al. 2005

Cryst. Res. Technol.

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The properties of Zinc-doped GaAs, grown by MOVPE employing the tertiary buthyl arsine precursor, were studied as a function of the doping level, comprised within the (1×10) range. Hall effect measurements were performed as a function of temperature; the simultaneous analysis of the Hall hole density and Hall mobility gave the effective doping concentration, the thermal ionisation energy of the acceptor impurities and the compensation ratio. Fast Fourier Transform Photoluminescence measurements were performed on the GaAs layers; the results were correlated with those obtained from the electrical analysis. A comparison of the obtained data with the results of an analogous investigation, previously performed on intrinsically Carbon doped GaAs layers, allowed the following conclusions: a) the GaAs layers exhibit a low content of non-intentional impurities (< 10 14 cm -3); b) both Zinc and Carbon show a low compensation ratio; c) both Carbon and Zinc doped layers show electrical and optical properties comparable with the state of the art; d) Carbon intrinsic doping appears preferable for low-medium carrier concentrations, while Zinc appears preferable for medium-high carrier concentrations (higher than about 5×10 17 cm -3 ).

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Section: Electrical Measurementssupporting

confidence: 72%

Section: Electrical Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Begotti¹,

Ghezzi²,

Longo³

et al. 2005

Cryst. Res. Technol.

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“…Разработка новых методов легирования [12], включа-ющих точный контроль уровня легирования [13] и новые способы реактивации примесей [14,15], привела к значи-тельному улучшению качества эпитаксиальных слоев и, как следствие, расширила сферу их применения [16,17]. Основными легирующими примесями в A III B V являются углерод и кремний.…”

Section: Introductionunclassified

Эпитаксиальные твердые растворы Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As : Mg с различным типом проводимости

Seredin¹,

Lenshin²,

Арсентьев³

et al. 2017

Физика И Техника Полупроводников

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На основе методов высокоразрешающей рентгеновской дифракции, рамановской и фотолюминесцентной спектроскопии исследованы структурные, оптические и энергетические свойства эпитаксиальных гетероструктур AlxGa1-xAs : Mg/GaAs(100) с различной степенью легирования магнием. Показано, что подбором технологических условий в твердом растворе AlxGa1-xAs : Mg может быть достигнут не только различный тип проводимости, но и существенно различная концентрация носителей заряда в эпитаксиальной пленке. DOI: 10.21883/FTP.2017.01.8342

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“…Intrinsic carbon incorporation in GaAs [3] and AlGaAs [4] is reported to increase with decrease in growth temperature (T gr ) and decrease in V/III ratio. We have investigated intrinsic carbon doping of AlGaAs using tertiarybutylarsine (TBAs).…”

Section: Introductionmentioning

confidence: 99%