2005
DOI: 10.1063/1.1977203
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Controlled p- and n-type doping of Fe2O3 nanobelt field effect transistors

Abstract: Pure α-Fe2O3 nanobelts are configured as field effect transistors and electrical transport studies demonstrate their n-type behavior. In order to control the electrical properties of the fabricated transistor, the nanobelt channels are doped with zinc. Depending on the doping condition, α-Fe2O3 nanobelts can be modified to either p-type or n-type with enhanced conductivity and electron mobility. Such behavior change is exhibited in the variation of the current-voltage (I-V) and I-Vg characteristics.

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Cited by 122 publications
(89 citation statements)
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“…In particular, ␣-Fe 2 O 3 ͑hematite͒ is a stable material, with magnetic and semiconducting properties, which has applications as photocatalyst, 1 gas sensor, 2 field emitter, 3 field effect transistors, 4 drug delivery, 5 and others. Bulk ␣-Fe 2 O 3 presents a magnetic transition at Morin temperature T M of about 260 K. Below T M , two magnetic sublattices are oriented along the rhombohedral ͑111͒ axis ͑c-axis͒ and are exactly antiparallel, inducing a uniaxial antiferromagnetic behavior.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, ␣-Fe 2 O 3 ͑hematite͒ is a stable material, with magnetic and semiconducting properties, which has applications as photocatalyst, 1 gas sensor, 2 field emitter, 3 field effect transistors, 4 drug delivery, 5 and others. Bulk ␣-Fe 2 O 3 presents a magnetic transition at Morin temperature T M of about 260 K. Below T M , two magnetic sublattices are oriented along the rhombohedral ͑111͒ axis ͑c-axis͒ and are exactly antiparallel, inducing a uniaxial antiferromagnetic behavior.…”
Section: Introductionmentioning
confidence: 99%
“…Hematite (α-Fe 2 O 3 )는 2.2 eV의 밴드 갭을 갖는 ntype의 산화물 반도체이다 [1]. 이 물질은 각종 촉매 [2] 와 센서 [3], 자성재료 [4]로 쓰일 뿐만 아니라 적색 염료 [5] 및 연료 전지의 전극 [6] 그리고 염료감응형 태양전지 [7]의 전극 재료 등에 다양하게 사용되고 있 다.…”
Section: 서 론unclassified
“…[6] Meanwhile, hematite nanorod or nanowire arrays also have the advantage of astructure free from grain boundaries, which can facilitate the transport of photogenerated holes to the semiconductor/liquid junction for furtheroxidation reaction while the photogenerated electrons can transfer to the conductive substrate. [6] Severalm ethods have been reported for the fabrication of hematite nanorodo rn anowirea rrays, includingt hermalo xidation, [10] hydrothermalt reatment, [11,12] and an anodic aluminumo xide templatea pproach. [13] Compared with other methods, hydrothermal treatment is simple and can be easily conducted without the need for templateso re xcessively hightemperatures.…”
Section: Introductionmentioning
confidence: 99%